BFU730LX Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU730LX
SMD Transistor Code: ZD
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.16 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Emitter-Base Voltage |Veb|: 1.3 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 53000 MHz
Forward Current Transfer Ratio (hFE), MIN: 205
Noise Figure, dB: -
Package: SOT883C
BFU730LX Transistor Equivalent Substitute - Cross-Reference Search
BFU730LX Datasheet (PDF)
bfu730lx.pdf
BFU730LXNPN wideband silicon germanium RF transistorRev. 1 8 May 2013 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostat
bfu730f.pdf
BFU730FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
