BFU730LX Datasheet. Specs and Replacement

Type Designator: BFU730LX  📄📄 

SMD Transistor Code: ZD

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 3 V

Maximum Emitter-Base Voltage |Veb|: 1.3 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 53000 MHz

Forward Current Transfer Ratio (hFE), MIN: 205

Noise Figure, dB: -

Package: SOT883C

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BFU730LX datasheet

 ..1. Size:165K  nxp

 bfu730lx.pdf pdf_icon

BFU730LX

BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostat... See More ⇒

 8.1. Size:128K  nxp

 bfu730f.pdf pdf_icon

BFU730LX

BFU730F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic ... See More ⇒

Detailed specifications: BFU550A, BFU550W, BFU550X, BFU550XR, BFU580G, BFU580Q, BFU590G, BFU590Q, D965, BFU768F, BFU910F, BFW44CSM, BFW44DCSM, BFX34SMD, BFX34SMD05, BFX48DCSM, BFY90DCSM

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