All Transistors. BFU730LX Datasheet

 

BFU730LX Datasheet and Replacement


   Type Designator: BFU730LX
   SMD Transistor Code: ZD
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.16 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Emitter-Base Voltage |Veb|: 1.3 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 53000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 205
   Noise Figure, dB: -
   Package: SOT883C
 

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BFU730LX Datasheet (PDF)

 ..1. Size:165K  nxp
 bfu730lx.pdf pdf_icon

BFU730LX

BFU730LXNPN wideband silicon germanium RF transistorRev. 1 8 May 2013 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostat

 8.1. Size:128K  nxp
 bfu730f.pdf pdf_icon

BFU730LX

BFU730FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

Datasheet: BFU550A , BFU550W , BFU550X , BFU550XR , BFU580G , BFU580Q , BFU590G , BFU590Q , NJW0281G , BFU768F , BFU910F , BFW44CSM , BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BFY90DCSM .

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