BFU768F Datasheet. Specs and Replacement

Type Designator: BFU768F  📄📄 

SMD Transistor Code: ZB*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.22 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110000 MHz

Forward Current Transfer Ratio (hFE), MIN: 155

Noise Figure, dB: -

Package: SOT343F

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BFU768F datasheet

 ..1. Size:163K  nxp

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BFU768F

BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost... See More ⇒

 9.1. Size:121K  nxp

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BFU768F

BFU760F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic ... See More ⇒

Detailed specifications: BFU550W, BFU550X, BFU550XR, BFU580G, BFU580Q, BFU590G, BFU590Q, BFU730LX, 2SD669A, BFU910F, BFW44CSM, BFW44DCSM, BFX34SMD, BFX34SMD05, BFX48DCSM, BFY90DCSM, BLD128DD

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