All Transistors. BFU768F Datasheet

 

BFU768F Datasheet, Equivalent, Cross Reference Search

Type Designator: BFU768F

SMD Transistor Code: ZB*

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.22 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 110000 MHz

Forward Current Transfer Ratio (hFE), MIN: 155

Noise Figure, dB: -

Package: SOT343F

BFU768F Transistor Equivalent Substitute - Cross-Reference Search

 

BFU768F Datasheet (PDF)

1.1. bfu768f.pdf Size:163K _update

BFU768F
BFU768F

BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

5.1. bfu760f.pdf Size:123K _nxp

BFU768F
BFU768F

BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

Datasheet: BFU550W , BFU550X , BFU550XR , BFU580G , BFU580Q , BFU590G , BFU590Q , BFU730LX , C103 , BFU910F , BFW44CSM , BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BFY90DCSM , BLD128DD .

 


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