All Transistors. BFU768F Datasheet

 

BFU768F Datasheet and Replacement


   Type Designator: BFU768F
   SMD Transistor Code: ZB*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.22 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.8 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 155
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU768F Datasheet (PDF)

 ..1. Size:163K  nxp
 bfu768f.pdf pdf_icon

BFU768F

BFU768FNPN wideband silicon germanium RF transistorRev. 1.2 24 December 2012 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

 9.1. Size:121K  nxp
 bfu760f.pdf pdf_icon

BFU768F

BFU760FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFX31

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