BFU910F Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU910F
SMD Transistor Code: F1*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 9.5 V
Maximum Collector-Emitter Voltage |Vce|: 2 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90000 MHz
Forward Current Transfer Ratio (hFE), MIN: 1900
Noise Figure, dB: -
Package: SOT343F
BFU910F Transistor Equivalent Substitute - Cross-Reference Search
BFU910F Datasheet (PDF)
..1. Size:139K nxp
bfu910f.pdf
bfu910f.pdf
BFU910FNPN wideband silicon germanium RF transistorRev. 2 16 January 2015 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.The BFU910F is suitable for small signal applications up to 20 GHz.1.2 Features and benefits Low noise high gain mi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
