All Transistors. BFU910F Datasheet

 

BFU910F Datasheet and Replacement


   Type Designator: BFU910F
   SMD Transistor Code: F1*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 9.5 V
   Maximum Collector-Emitter Voltage |Vce|: 2 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1900
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU910F Datasheet (PDF)

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BFU910F

BFU910FNPN wideband silicon germanium RF transistorRev. 2 16 January 2015 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.The BFU910F is suitable for small signal applications up to 20 GHz.1.2 Features and benefits Low noise high gain mi

Datasheet: BFU550X , BFU550XR , BFU580G , BFU580Q , BFU590G , BFU590Q , BFU730LX , BFU768F , 2SD669 , BFW44CSM , BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BFY90DCSM , BLD128DD , BLV38 .

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