BFU910F Datasheet. Specs and Replacement
Type Designator: BFU910F 📄📄
SMD Transistor Code: F1*
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 9.5 V
Maximum Collector-Emitter Voltage |Vce|: 2 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90000 MHz
Forward Current Transfer Ratio (hFE), MIN: 1900
Package: SOT343F
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BFU910F datasheet
BFU910F NPN wideband silicon germanium RF transistor Rev. 2 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits Low noise high gain mi... See More ⇒
Detailed specifications: BFU550X, BFU550XR, BFU580G, BFU580Q, BFU590G, BFU590Q, BFU730LX, BFU768F, TIP2955, BFW44CSM, BFW44DCSM, BFX34SMD, BFX34SMD05, BFX48DCSM, BFY90DCSM, BLD128DD, BLV38
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