BLV80 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV80
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SOT121
BLV80 Transistor Equivalent Substitute - Cross-Reference Search
BLV80 Datasheet (PDF)
..1. Size:257K hgsemi
blv80.pdf
blv80.pdf
HG RF POWER TRANSISTORBLV80-28SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .500 4L FLGThe BLV80-28 is Designed for 28 VoltClass C VHF PowerAmplifierApplications up to 175 MHz.FEATURES: = 65 % min. at 80 W/175 MHz CPG = 6.5 dB min. at 80 W/175 MHzOmnigold Metalization SystemMAXIMUM RATINGSIC 9.0 AVCBO 65 VVCEO 35 V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
