All Transistors. BLV80 Datasheet

 

BLV80 Datasheet, Equivalent, Cross Reference Search

Type Designator: BLV80

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT121

BLV80 Transistor Equivalent Substitute - Cross-Reference Search

 

BLV80 Datasheet (PDF)

1.1. blv80.pdf Size:257K _update

BLV80

HG RF POWER TRANSISTOR BLV80-28 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The BLV80-28 is Designed for 28 Volt Class C VHF Power AmplifierApplications up to 175 MHz. FEATURES: = 65 % min. at 80 W/175 MHz C PG = 6.5 dB min. at 80 W/175 MHz Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VCEO 35 V

Datasheet: BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BFY90DCSM , BLD128DD , BLV38 , BLV62 , BEL187 , BLV948 , BLV97CE , BLX65E , BLX65ES , BLY93H , BR3CA1353F , BR3CG3802 , BR3CG984K .

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