BLV80 Datasheet. Specs and Replacement

Type Designator: BLV80  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT121

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BLV80 datasheet

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BLV80

HG RF POWER TRANSISTOR BLV80-28 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .500 4L FLG The BLV80-28 is Designed for 28 Volt Class C VHF Power AmplifierApplications up to 175 MHz. FEATURES = 65 % min. at 80 W/175 MHz C PG = 6.5 dB min. at 80 W/175 MHz Omnigold Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VCEO 35 V ... See More ⇒

Detailed specifications: BFW44DCSM, BFX34SMD, BFX34SMD05, BFX48DCSM, BFY90DCSM, BLD128DD, BLV38, BLV62, 2N2907, BLV948, BLV97CE, BLX65E, BLX65ES, BLY93H, BR3CA1353F, BR3CG3802, BR3CG984K

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