All Transistors. BLV80 Datasheet

 

BLV80 Datasheet and Replacement


   Type Designator: BLV80
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT121
 

 BLV80 Substitution

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BLV80 Datasheet (PDF)

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BLV80

HG RF POWER TRANSISTORBLV80-28SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .500 4L FLGThe BLV80-28 is Designed for 28 VoltClass C VHF PowerAmplifierApplications up to 175 MHz.FEATURES: = 65 % min. at 80 W/175 MHz CPG = 6.5 dB min. at 80 W/175 MHzOmnigold Metalization SystemMAXIMUM RATINGSIC 9.0 AVCBO 65 VVCEO 35 V

Datasheet: BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BFY90DCSM , BLD128DD , BLV38 , BLV62 , 2SC2482 , BLV948 , BLV97CE , BLX65E , BLX65ES , BLY93H , BR3CA1353F , BR3CG3802 , BR3CG984K .

History: AC151-4 | BLV97CE | AF116

Keywords - BLV80 transistor datasheet

 BLV80 cross reference
 BLV80 equivalent finder
 BLV80 lookup
 BLV80 substitution
 BLV80 replacement

 

 
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