BLV97CE Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV97CE
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 27 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 44 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SOT171
BLV97CE Transistor Equivalent Substitute - Cross-Reference Search
BLV97CE Datasheet (PDF)
..1. Size:65K philips
blv97ce.pdf
blv97ce.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV97CEUHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV97CEFEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171envelope, intended for common emitter, class-AB Ballasting resistors for an optimu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
