All Transistors. BLV97CE Datasheet

 

BLV97CE Datasheet and Replacement


   Type Designator: BLV97CE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 27 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Collector Capacitance (Cc): 44 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SOT171
 

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BLV97CE Datasheet (PDF)

 ..1. Size:65K  philips
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BLV97CE

DISCRETE SEMICONDUCTORSDATA SHEETBLV97CEUHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV97CEFEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171envelope, intended for common emitter, class-AB Ballasting resistors for an optimu

 ..2. Size:135K  njs
 blv97ce.pdf pdf_icon

BLV97CE

Datasheet: BFX34SMD05 , BFX48DCSM , BFY90DCSM , BLD128DD , BLV38 , BLV62 , BLV80 , BLV948 , B647 , BLX65E , BLX65ES , BLY93H , BR3CA1353F , BR3CG3802 , BR3CG984K , BR3DA122DK , BR3DA6821K .

History: AC151-4

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