BLV97CE Datasheet. Specs and Replacement

Type Designator: BLV97CE  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 27 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Collector Capacitance (Cc): 44 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT171

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BLV97CE datasheet

 ..1. Size:65K  philips

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BLV97CE

DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB Ballasting resistors for an optimu... See More ⇒

 ..2. Size:135K  njs

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BLV97CE

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Detailed specifications: BFX34SMD05, BFX48DCSM, BFY90DCSM, BLD128DD, BLV38, BLV62, BLV80, BLV948, 2SC828, BLX65E, BLX65ES, BLY93H, BR3CA1353F, BR3CG3802, BR3CG984K, BR3DA122DK, BR3DA6821K

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