All Transistors. BLY93H Datasheet

 

BLY93H Datasheet and Replacement


   Type Designator: BLY93H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 625 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: 380-4L
 

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BLY93H Datasheet (PDF)

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BLY93H

HG RF POWER TRANSISTORBLY93HSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 AClass C, 28 V High Band Applications up to 175 MHz. CBE CE EFEATURES: C EBCommon Emitter BPG = 9.0 dB at 25 W/175 MHz IDHOmnigold Metalization SystemJGMAXIMUM RATINGS

Datasheet: BLD128DD , BLV38 , BLV62 , BLV80 , BLV948 , BLV97CE , BLX65E , BLX65ES , 2SC1740 , BR3CA1353F , BR3CG3802 , BR3CG984K , BR3DA122DK , BR3DA6821K , BR3DD13002DG1K , BR3DD13002E1K , BR3DD13003VK1K .

History: CD3968

Keywords - BLY93H transistor datasheet

 BLY93H cross reference
 BLY93H equivalent finder
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