BLY93H Datasheet, Equivalent, Cross Reference Search
Type Designator: BLY93H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 625 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: 380-4L
BLY93H Transistor Equivalent Substitute - Cross-Reference Search
BLY93H Datasheet (PDF)
..1. Size:269K hgsemi
bly93h.pdf
bly93h.pdf
HG RF POWER TRANSISTORBLY93HSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 AClass C, 28 V High Band Applications up to 175 MHz. CBE CE EFEATURES: C EBCommon Emitter BPG = 9.0 dB at 25 W/175 MHz IDHOmnigold Metalization SystemJGMAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
