BLY93H Datasheet. Specs and Replacement
Type Designator: BLY93H 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 625 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: 380-4L
📄📄 Copy
BLY93H Substitution
- BJT ⓘ Cross-Reference Search
BLY93H datasheet
HG RF POWER TRANSISTOR BLY93H Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The HG BLY93H is Designed for .112x45 A Class C, 28 V High Band Applications up to 175 MHz. C B E C E E FEATURES C E B Common Emitter B PG = 9.0 dB at 25 W/175 MHz I D H Omnigold Metalization System J G MAXIMUM RATINGS ... See More ⇒
Detailed specifications: BLD128DD, BLV38, BLV62, BLV80, BLV948, BLV97CE, BLX65E, BLX65ES, TIP32C, BR3CA1353F, BR3CG3802, BR3CG984K, BR3DA122DK, BR3DA6821K, BR3DD13002DG1K, BR3DD13002E1K, BR3DD13003VK1K
Keywords - BLY93H pdf specs
BLY93H cross reference
BLY93H equivalent finder
BLY93H pdf lookup
BLY93H substitution
BLY93H replacement
