BRF90G Datasheet, Equivalent, Cross Reference Search
Type Designator: BRF90G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO50
BRF90G Transistor Equivalent Substitute - Cross-Reference Search
BRF90G Datasheet (PDF)
..1. Size:116K apt
brf90g.pdf
brf90g.pdf
140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855BFR90BRF90GRF & MICROWAVE DISCRETE *G Denotes RoHS Compliant, Pb Free Terminal FinishLOW POWER TRANSISTORSFeatures High Current-Gain Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain Gmax = 18dB (t
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
