BRF90G Specs and Replacement
Type Designator: BRF90G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO50
BRF90G Substitution
- BJT ⓘ Cross-Reference Search
BRF90G datasheet
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 BFR90 BRF90G RF & MICROWAVE DISCRETE *G Denotes RoHS Compliant, Pb Free Terminal Finish LOW POWER TRANSISTORS Features High Current-Gain Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain Gmax = 18dB (t... See More ⇒
Detailed specifications: BR3DD13009X8F , BR3DD13009X9P , BR3DD13009Z8F , BR3DD5555R , BR3DD6802Q , BR3DG1684 , BR3DG227K , BR3DG536K , A1015 , BSV52LT1G , BSV62SMD , BSV62SMD05 , BSV64SMD , BSX20DCSM , BSX33CSM , BSX33DCSM , BSX36DCSM .
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