All Transistors. BRF90G Datasheet

 

BRF90G Datasheet and Replacement


   Type Designator: BRF90G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO50
 
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BRF90G Datasheet (PDF)

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BRF90G

140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855BFR90BRF90GRF & MICROWAVE DISCRETE *G Denotes RoHS Compliant, Pb Free Terminal FinishLOW POWER TRANSISTORSFeatures High Current-Gain Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain Gmax = 18dB (t

Datasheet: BR3DD13009X8F , BR3DD13009X9P , BR3DD13009Z8F , BR3DD5555R , BR3DD6802Q , BR3DG1684 , BR3DG227K , BR3DG536K , TIP3055 , BSV52LT1G , BSV62SMD , BSV62SMD05 , BSV64SMD , BSX20DCSM , BSX33CSM , BSX33DCSM , BSX36DCSM .

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