All Transistors. 3CD150 Datasheet

 

3CD150 Datasheet and Replacement


   Type Designator: 3CD150
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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3CD150 Datasheet (PDF)

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3CD150

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

Datasheet: 3CD1 , 3CD100 , 3CD1010 , 3CD102 , 3CD103 , 3CD1094 , 3CD1290 , 3CD1375 , 2SC1815 , 3CD205 , 3CD3 , 3CD32 , 3CD32A , 3CD32B , 3CD32C , 3CD4 , 3CD42 .

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