3CD150 Datasheet. Specs and Replacement

Type Designator: 3CD150  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

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3CD150 datasheet

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3CD150

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC... See More ⇒

Detailed specifications: 3CD1, 3CD100, 3CD1010, 3CD102, 3CD103, 3CD1094, 3CD1290, 3CD1375, TIP35C, 3CD205, 3CD3, 3CD32, 3CD32A, 3CD32B, 3CD32C, 3CD4, 3CD42

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