All Transistors. 3CD150 Datasheet

 

3CD150 Datasheet and Replacement


   Type Designator: 3CD150
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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3CD150 Datasheet (PDF)

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3CD150

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1588-GR | 3CG4126 | BC559BBK | 2N5182 | 2SC5095 | CSC1685 | 2SA1375

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