All Transistors. 3CG562 Datasheet

 

3CG562 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3CG562
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 38 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO92LM

 3CG562 Transistor Equivalent Substitute - Cross-Reference Search

   

3CG562 Datasheet (PDF)

 ..1. Size:255K  china
3cg562.pdf

3CG562 3CG562

2SB562(3CG562) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency power amplifier. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -1.0 A C I -1.5 A cp P 900 mW C T 150 j T -55150 stg

 0.1. Size:258K  lzg
3cg562m.pdf

3CG562 3CG562

2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h , 2SC1959M(3DG1959M) FEFeatures: Excellent h linearity, complementary pair with 2SC1959M(3DG1959M). FE

 0.2. Size:193K  lzg
3cg562tm.pdf

3CG562 3CG562

2SA562TM(3CG562TM) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h ,1W , 2SC1959(3DG1959) FEFeatures: Excellent h linearity,1 watt amplifier application, complementary pair with

 9.1. Size:129K  china
3cg56.pdf

3CG562

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A

 9.2. Size:113K  china
3cg560.pdf

3CG562

3CG560 PNP PCM TA=25 500 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 450 V V(BR)CEO ICE=0.1mA 450 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=360V 0.1 A ICEO VCE=360V 0.1 A IEBO VEB=5.0V 0.1 A VBEsat 0.9 IC=50mA V I

 9.3. Size:189K  lzg
3cg561.pdf

3CG562 3CG562

2SB561(3CG561) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency power amplifier. : 2SD467(3DG467) Features: Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-25 V V -20 V CEO V -5.0 V EBO I -0.7 A C

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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