3CG562 Datasheet. Specs and Replacement

Type Designator: 3CG562  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 38 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO92LM

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3CG562 datasheet

 ..1. Size:255K  china

3cg562.pdf pdf_icon

3CG562

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3cg562m.pdf pdf_icon

3CG562

2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency low power amplifier, driver stage amplifier, switching applications. h , 2SC1959M(3DG1959M) FE Features Excellent h linearity, complementary pair with 2SC1959M(3DG1959M). FE ... See More ⇒

 0.2. Size:193K  lzg

3cg562tm.pdf pdf_icon

3CG562

2SA562TM(3CG562TM) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency low power amplifier, driver stage amplifier, switching applications. h ,1W , 2SC1959(3DG1959) FE Features Excellent h linearity,1 watt amplifier application, complementary pair with... See More ⇒

 9.1. Size:129K  china

3cg56.pdf pdf_icon

3CG562

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A ... See More ⇒

Detailed specifications: 3CG4126, 3CG4403, 3CG5, 3CG5087, 3CG5415, 3CG56, 3CG560, 3CG561, C3198, 3CG562M, 3CG562TM, 3CG5T3Z, 3CG6, 3CG608, 3CG608K, 3CG624, 3CG636

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