All Transistors. 3DG27 Datasheet

 

3DG27 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG27

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO18

3DG27 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG27 Datasheet (PDF)

1.1. 3dg2717m.pdf Size:234K _china

3DG27
3DG27

2SC2717M(3DG2717M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于电视末级图象放大。/Purpose: TV final picture IF amplifier applications. 特点:增益高,h 线性好。/Features: High gain, good linearity of h . FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO

1.2. 3dg2703.pdf Size:290K _china

3DG27
3DG27

2SC2703(3DG2703) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大。 Purpose: Audio frequency power amplifier applications. 特点:直流增益高:h =100~320。 FE Features: High DC current gain: h =100~320. FE 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V CBO 30 V V 30 V CEO V 5.0

 1.3. 3dg27.pdf Size:110K _china

3DG27

3DG27 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TA=25℃ 700 mW ICM 200 mA 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)CEO ICE=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=30V ≤2.0 μA 直 ICEO VCE=30V ≤2.0 μA 流 IEBO

1.4. 3dg2715.pdf Size:171K _china

3DG27
3DG27

2SC2715(3DG2715) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。/Purpose: High frequency amplifier applications. 特点:功率增益高,用于调频中频,振荡级和调幅转换中频级。 Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sy

 1.5. 3dg2734.pdf Size:141K _china

3DG27
3DG27

2SC2734(3DG2734) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频频率转换,负载振荡器,宽频放大。 Purpose: UHF frequency converter, local oscillator,wide band amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150

1.6. 3dg2710.pdf Size:223K _china

3DG27
3DG27

2SC2710(3DG2710) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于音频放大。 Purpose: Audio amplifier applications. 特点: 直流电流增益高,可与 2SA1150(3CG1150)互补。 Features: High DC current gain, complementary pair with 2SA1150(3CG1150). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 35 V CBO

1.7. 3dg2786.pdf Size:396K _china

3DG27
3DG27

2SC2786(3DG2786) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于调频、射频放大电路及调频调谐器中的本机振荡。 Purpose: FM RF amplifier and local oscillator of FM tuner. 特点:产品增益带宽高,输出电容小,噪声系数低。 Features: High gain bandwidth product, small output capacitance,low noise figure. 极限参数/Absolute maximum r

1.8. 3dg2785.pdf Size:321K _china

3DG27
3DG27

2SC2785(3DG2785) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大器驱动级及低速开关/Purpose: Driver stage of AF amplifier and low speed switching. 特点:耐压高,极好的线性,可与 2SA1175(3CG1175)互补/Features: High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE 极限参数/Absolute maximum ratings(Ta=25℃)

1.9. 3dg2732.pdf Size:152K _china

3DG27
3DG27

2SC2732(3DG2732) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频的频率转换。 Purpose: UHF frequency converter. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参数/Electrical charact

1.10. 3dg2712.pdf Size:297K _china

3DG27
3DG27

2SC2712(3DG2712) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通音频放大。 Purpose: Audio frequency general purpose amplifier applications. 特点:电压,电流,放大高,噪声低,放大线性好 Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

1.11. 3dg2736.pdf Size:177K _china

3DG27
3DG27

2SC2736(3DG2736) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于超高频、特高频的频率转换,负载振荡器。 Purpose: UHF/VHF frequency converter, local oscillator. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 ℃ j T -55~

1.12. 3dg2714.pdf Size:189K _china

3DG27
3DG27

2SC2714(3DG2714) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。/Purpose: High frequency amplifier applications. 特点:反向传输电容小,噪声系数低。 Features: Small reverse transfer capacitance, low noise figure. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 30 V CEO V 4

1.13. 3dg2717.pdf Size:211K _china

3DG27
3DG27

2SC2717(3DG2717) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于电视末级图象放大。/Purpose: TV final picture IF amplifier applications. 特点:增益高,h 线性好。/Features: High gain, good linearity of h . FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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