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3DG27 Specs and Replacement


   Type Designator: 3DG27
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO18
 

 3DG27 Substitution

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3DG27 detailed specifications

 ..1. Size:110K  china
3dg27.pdf pdf_icon

3DG27

3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO ... See More ⇒

 0.1. Size:177K  foshan
3dg2736.pdf pdf_icon

3DG27

2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR , Purpose UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55 ... See More ⇒

 0.2. Size:223K  foshan
3dg2710.pdf pdf_icon

3DG27

2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒

 0.3. Size:211K  foshan
3dg2717.pdf pdf_icon

3DG27

2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒

Detailed specifications: 3DG2413K , 3DG2458 , 3DG2482 , 3DG2482HA1 , 3DG2500 , 3DG2610 , 3DG2655 , 3DG2668 , 2SC4793 , 3DG2703 , 3DG2710 , 3DG2712 , 3DG2714 , 3DG2715 , 3DG2717 , 3DG2717M , 3DG2732 .

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Keywords - 3DG27 transistor specs

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