3DG27 Specs and Replacement
Type Designator: 3DG27
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO18
3DG27 Substitution
3DG27 detailed specifications
3dg27.pdf
3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO ... See More ⇒
3dg2736.pdf
2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR , Purpose UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55 ... See More ⇒
3dg2710.pdf
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒
3dg2717.pdf
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒
Detailed specifications: 3DG2413K , 3DG2458 , 3DG2482 , 3DG2482HA1 , 3DG2500 , 3DG2610 , 3DG2655 , 3DG2668 , 2SC4793 , 3DG2703 , 3DG2710 , 3DG2712 , 3DG2714 , 3DG2715 , 3DG2717 , 3DG2717M , 3DG2732 .
History: CHT55GP
Keywords - 3DG27 transistor specs
3DG27 cross reference
3DG27 equivalent finder
3DG27 lookup
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3DG27 replacement
History: CHT55GP
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