All Transistors. 3DG2717M Datasheet

 

3DG2717M Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2717M

SMD Transistor Code: H17

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

3DG2717M Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2717M Datasheet (PDF)

1.1. 3dg2717m.pdf Size:234K _china

3DG2717M
3DG2717M

2SC2717M(3DG2717M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于电视末级图象放大。/Purpose: TV final picture IF amplifier applications. 特点:增益高,h 线性好。/Features: High gain, good linearity of h . FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO

3.1. 3dg2717.pdf Size:211K _china

3DG2717M
3DG2717M

2SC2717(3DG2717) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于电视末级图象放大。/Purpose: TV final picture IF amplifier applications. 特点:增益高,h 线性好。/Features: High gain, good linearity of h . FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I

 4.1. 3dg2715.pdf Size:171K _china

3DG2717M
3DG2717M

2SC2715(3DG2715) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。/Purpose: High frequency amplifier applications. 特点:功率增益高,用于调频中频,振荡级和调幅转换中频级。 Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sy

4.2. 3dg2710.pdf Size:223K _china

3DG2717M
3DG2717M

2SC2710(3DG2710) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于音频放大。 Purpose: Audio amplifier applications. 特点: 直流电流增益高,可与 2SA1150(3CG1150)互补。 Features: High DC current gain, complementary pair with 2SA1150(3CG1150). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 35 V CBO

 4.3. 3dg2712.pdf Size:297K _china

3DG2717M
3DG2717M

2SC2712(3DG2712) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通音频放大。 Purpose: Audio frequency general purpose amplifier applications. 特点:电压,电流,放大高,噪声低,放大线性好 Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

4.4. 3dg2714.pdf Size:189K _china

3DG2717M
3DG2717M

2SC2714(3DG2714) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。/Purpose: High frequency amplifier applications. 特点:反向传输电容小,噪声系数低。 Features: Small reverse transfer capacitance, low noise figure. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 30 V CEO V 4

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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