3DG2717M Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

3DG2717M Datasheet. Specs and Replacement

Type Designator: 3DG2717M 📄📄

SMD Transistor Code: H17

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

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3DG2717M datasheet

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3dg2717m.pdf pdf_icon

2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO ... See More ⇒

7.1. Size:211K foshan

3dg2717.pdf pdf_icon

2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒

8.1. Size:223K foshan

3dg2710.pdf pdf_icon

2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒

8.2. Size:297K foshan

3dg2712.pdf pdf_icon