3DG4003 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG4003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO252
3DG4003 Transistor Equivalent Substitute - Cross-Reference Search
3DG4003 Datasheet (PDF)
3dg4003.pdf
2SC4003(3DG4003) NPN /SILICON NPN TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent h linearity. FE/Absolute maximum ratings(Ta=25)
3dg40005 as-h.pdf
NPN R 3DG40005 AS-H 3DG40005 AS-H EB VEBO>20V NPN VCEO 400 V IC 50 mA hFE Ptot Ta=25 0.3 W
3dg4081.pdf
2SC4081(3DG4081) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150
3dg4081w.pdf
2SC4081W(3DG4081W) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150
3dg4097.pdf
2SC4097(3DG4097) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power transistor. :, 2SA1577(3CG1577) Features: Low C , complements the 2SA1577(3CG1577). ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 32 V CEO V 5.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
