All Transistors. 3DG4003 Datasheet

 

3DG4003 Datasheet and Replacement


   Type Designator: 3DG4003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO252
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3DG4003 Datasheet (PDF)

 ..1. Size:256K  lzg
 3dg4003.pdf pdf_icon

3DG4003

2SC4003(3DG4003) NPN /SILICON NPN TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent h linearity. FE/Absolute maximum ratings(Ta=25)

 8.1. Size:144K  crhj
 3dg40005 as-h.pdf pdf_icon

3DG4003

NPN R 3DG40005 AS-H 3DG40005 AS-H EB VEBO>20V NPN VCEO 400 V IC 50 mA hFE Ptot Ta=25 0.3 W

 9.1. Size:215K  lzg
 3dg4081.pdf pdf_icon

3DG4003

2SC4081(3DG4081) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150

 9.2. Size:206K  lzg
 3dg4081w.pdf pdf_icon

3DG4003

2SC4081W(3DG4081W) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150

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History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2SD1994A

Keywords - 3DG4003 transistor datasheet

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