3DG5551 Datasheet. Specs and Replacement
Type Designator: 3DG5551 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
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3DG5551 Substitution
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3DG5551 datasheet
2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR /Purpose General purpose high voltage amplifier. , 2N5401(3CG5401) /Features High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 180 V CBO V 1... See More ⇒
Detailed specifications: 3DG5088, 3DG512B, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 2N3904, 3DG5770, 3DG6, 3DG639, 3DG6520, 3DG718A, 3DG720, 3DG752TM, 3DG8
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