3DG5551 Specs and Replacement
Type Designator: 3DG5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
3DG5551 Substitution
3DG5551 detailed specifications
..1. Size:220K lzg
3dg5551.pdf
3dg5551.pdf
2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR /Purpose General purpose high voltage amplifier. , 2N5401(3CG5401) /Features High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 180 V CBO V 1... See More ⇒
Detailed specifications: 3DG5088 , 3DG512B , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 2N3904 , 3DG5770 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 .
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