All Transistors. 3DG5551 Datasheet

 

3DG5551 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG5551

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

3DG5551 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG5551 Datasheet (PDF)

1.1. 3dg5551.pdf Size:220K _china

3DG5551
3DG5551

2N5551(3DG5551) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通高压放大。/Purpose: General purpose high voltage amplifier. 特点:击穿电压高,可与 2N5401(3CG5401)互补。/Features: High voltage, complementary Pair with 2N5401(3CG5401). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 180 V CBO V 1

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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