3DG5551 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
3DG5551 Transistor Equivalent Substitute - Cross-Reference Search
3DG5551 Datasheet (PDF)
..1. Size:220K lzg
3dg5551.pdf
3dg5551.pdf
2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR :/Purpose: General purpose high voltage amplifier. :, 2N5401(3CG5401)/Features: High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 180 V CBO V 1
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
