All Transistors. 3DG5551 Datasheet

 

3DG5551 Datasheet and Replacement


   Type Designator: 3DG5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92
 

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3DG5551 Datasheet (PDF)

 ..1. Size:220K  lzg
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3DG5551

2N5551(3DG5551) NPN /SILICON NPN TRANSISTOR :/Purpose: General purpose high voltage amplifier. :, 2N5401(3CG5401)/Features: High voltage, complementary Pair with 2N5401(3CG5401). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 180 V CBO V 1

Datasheet: 3DG5088 , 3DG512B , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 2N3055 , 3DG5770 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 .

History: J582 | 2SC941Y | 2SC941TMR

Keywords - 3DG5551 transistor datasheet

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