All Transistors. 3DG5770 Datasheet

 

3DG5770 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG5770

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 1.1 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

3DG5770 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG5770 Datasheet (PDF)

1.1. 3dg5770.pdf Size:268K _china

3DG5770
3DG5770

2N5770(3DG5770) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于集电极电流在 1.0mA~30mA 之间的射频放大,振荡和倍频电路。 Purpose: Use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0mA~30mA range. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 15

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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