3DG5770 Datasheet. Specs and Replacement

Type Designator: 3DG5770  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 1.1 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

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3DG5770 datasheet

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3DG5770

2N5770(3DG5770) NPN /SILION NPN TRANSISTOR 1.0mA 30mA Purpose Use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0mA 30mA range. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 15 ... See More ⇒

Detailed specifications: 3DG512B, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 2N2222, 3DG6, 3DG639, 3DG6520, 3DG718A, 3DG720, 3DG752TM, 3DG8, 3DG8050

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