All Transistors. 3DG5770 Datasheet

 

3DG5770 Datasheet and Replacement


   Type Designator: 3DG5770
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92
 

 3DG5770 Substitution

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3DG5770 Datasheet (PDF)

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3DG5770

2N5770(3DG5770) NPN /SILION NPN TRANSISTOR : 1.0mA30mA Purpose: Use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0mA30mA range. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 15

Datasheet: 3DG512B , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , C1815 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 .

History: BC857BW | CMC4015A | FJNS3207R | 2SC609T | BC849CW | 2SC608 | KTC3770U

Keywords - 3DG5770 transistor datasheet

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