3DG5770 Specs and Replacement
Type Designator: 3DG5770
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
3DG5770 Substitution
3DG5770 detailed specifications
..1. Size:268K lzg
3dg5770.pdf
3dg5770.pdf
2N5770(3DG5770) NPN /SILION NPN TRANSISTOR 1.0mA 30mA Purpose Use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0mA 30mA range. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 15 ... See More ⇒
Detailed specifications: 3DG512B , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 2N2222 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 .
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