All Transistors. 3DG5770 Datasheet

 

3DG5770 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG5770
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92

 3DG5770 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG5770 Datasheet (PDF)

 ..1. Size:268K  lzg
 3dg5770.pdf

3DG5770 3DG5770

2N5770(3DG5770) NPN /SILION NPN TRANSISTOR : 1.0mA30mA Purpose: Use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0mA30mA range. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 15

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD975 | 2N2987

 

 
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