US6T9 Datasheet, Equivalent, Cross Reference Search
Type Designator: US6T9
SMD Transistor Code: T09
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 320 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: TUMT6
US6T9 Transistor Equivalent Substitute - Cross-Reference Search
US6T9 Datasheet (PDF)
..1. Size:71K rohm
us6t9.pdf
us6t9.pdf
US6T9 Transistors General purpose amplification (-30V, -1A) US6T9 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) -350mV At IC = -500mA / IB = -25mA ROHM : TUMT6 Abbreviated symbol : T09 Equivalent circuit Absolute maximum ratings (Ta=25C) Paramete
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
