All Transistors. US6T9 Datasheet

 

US6T9 Datasheet and Replacement


   Type Designator: US6T9
   SMD Transistor Code: T09
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: TUMT6
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US6T9 Datasheet (PDF)

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US6T9

US6T9 Transistors General purpose amplification (-30V, -1A) US6T9 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) -350mV At IC = -500mA / IB = -25mA ROHM : TUMT6 Abbreviated symbol : T09 Equivalent circuit Absolute maximum ratings (Ta=25C) Paramete

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History: MJE703 | 2SD1536M | MMUN2111LT1G | MD3725F | 2N4432 | DDTA144VE | MJE13002I5

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