US6T9 Datasheet. Specs and Replacement

Type Designator: US6T9  📄📄 

SMD Transistor Code: T09

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 320 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: TUMT6

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US6T9 datasheet

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US6T9

US6T9 Transistors General purpose amplification (-30V, -1A) US6T9 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) -350mV At IC = -500mA / IB = -25mA ROHM TUMT6 Abbreviated symbol T09 Equivalent circuit Absolute maximum ratings (Ta=25 C) Paramete... See More ⇒

Detailed specifications: MHQ2369AHXV, MHQ2369HX, MHQ2484HX, MHQ3251AHX, MHQ3468HX, MHQ6002HX, MHQ918HX, US6T8, TIP142, US6X7, US6X8, UT3PP, UTV020, UTV040, VT6T1, VT6T11, VT6T12

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