All Transistors. UMZ1M Datasheet

 

UMZ1M Datasheet and Replacement


   Type Designator: UMZ1M
   SMD Transistor Code: 3F
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-363
 

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UMZ1M Datasheet (PDF)

 ..1. Size:379K  first silicon
 umz1m.pdf pdf_icon

UMZ1M

SEMICONDUCTORUMZ1NTECHNICAL DATADual General Purpose TransistorsNPN/PNP Duals (Complimentary)65 These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.12We declare that the material of product compliance with RoHS requirements. 3SOT-363/SC-883 2

Datasheet: UMT1NFHA , UMT2NFHA , UMT4401 , UMT4403 , UMX1NFHA , UMX21N , UMX2NFHA , UMX3NFHA , MJE340 , UMZ1NFHA , UMZ1NT1G , UMZ2NFHA , US5L10 , US5L12 , US5L9 , FCX493A , FD75C .

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