All Transistors. UMZ1M Datasheet

 

UMZ1M Datasheet, Equivalent, Cross Reference Search


   Type Designator: UMZ1M
   SMD Transistor Code: 3F
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-363

 UMZ1M Transistor Equivalent Substitute - Cross-Reference Search

   

UMZ1M Datasheet (PDF)

 ..1. Size:379K  first silicon
 umz1m.pdf

UMZ1M UMZ1M

SEMICONDUCTORUMZ1NTECHNICAL DATADual General Purpose TransistorsNPN/PNP Duals (Complimentary)65 These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.12We declare that the material of product compliance with RoHS requirements. 3SOT-363/SC-883 2

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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