UMZ1M Datasheet. Specs and Replacement
Type Designator: UMZ1M 📄📄
SMD Transistor Code: 3F
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-363
📄📄 Copy
UMZ1M Substitution
- BJT ⓘ Cross-Reference Search
UMZ1M datasheet
SEMICONDUCTOR UMZ1N TECHNICAL DATA Dual General Purpose Transistors NPN/PNP Duals (Complimentary) 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 2 We declare that the material of product compliance with RoHS requirements. 3 SOT-363/SC-88 3 2 ... See More ⇒
Detailed specifications: UMT1NFHA, UMT2NFHA, UMT4401, UMT4403, UMX1NFHA, UMX21N, UMX2NFHA, UMX3NFHA, 2SC4793, UMZ1NFHA, UMZ1NT1G, UMZ2NFHA, US5L10, US5L12, US5L9, FCX493A, FD75C
Keywords - UMZ1M pdf specs
UMZ1M cross reference
UMZ1M equivalent finder
UMZ1M pdf lookup
UMZ1M substitution
UMZ1M replacement
