FF8550HQLG Datasheet. Specs and Replacement

Type Designator: FF8550HQLG  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-23

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FF8550HQLG datasheet

 ..1. Size:1005K  first silicon

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FF8550HQLG

FF8550HQLG Plastic-Encapsulate Transistors Simplified outline FF8550HQLG TRANSISTOR PNP) SOT-23 Features 3 Complimentary to F8050HQLG High Collector Current 1 1. BASE 2. EMITTER 2 3. COLLECTOR Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Vol... See More ⇒

Detailed specifications: UMZ1NFHA, UMZ1NT1G, UMZ2NFHA, US5L10, US5L12, US5L9, FCX493A, FD75C, BD135, FFB2907A, FG531, FH205, FH206, FH306, FH309, FH317, FH6298

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