All Transistors. FF8550HQLG Datasheet

 

FF8550HQLG Datasheet and Replacement


   Type Designator: FF8550HQLG
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
 

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FF8550HQLG Datasheet (PDF)

 ..1. Size:1005K  first silicon
 ff8550hplg ff8550hqlg.pdf pdf_icon

FF8550HQLG

FF8550HQLGPlastic-Encapsulate TransistorsSimplified outlineFF8550HQLG TRANSISTORPNP)SOT-23Features3 Complimentary to F8050HQLG High Collector Current11. BASE 2. EMITTER 23. COLLECTORMaximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Vol

Datasheet: UMZ1NFHA , UMZ1NT1G , UMZ2NFHA , US5L10 , US5L12 , US5L9 , FCX493A , FD75C , BD135 , FFB2907A , FG531 , FH205 , FH206 , FH306 , FH309 , FH317 , FH6298 .

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