FF8550HQLG Datasheet, Equivalent, Cross Reference Search
Type Designator: FF8550HQLG
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-23
FF8550HQLG Transistor Equivalent Substitute - Cross-Reference Search
FF8550HQLG Datasheet (PDF)
..1. Size:1005K first silicon
ff8550hplg ff8550hqlg.pdf
ff8550hplg ff8550hqlg.pdf
FF8550HQLGPlastic-Encapsulate TransistorsSimplified outlineFF8550HQLG TRANSISTORPNP)SOT-23Features3 Complimentary to F8050HQLG High Collector Current11. BASE 2. EMITTER 23. COLLECTORMaximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Vol
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
