FHC122E Datasheet, Equivalent, Cross Reference Search
Type Designator: FHC122E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-18
FHC122E Transistor Equivalent Substitute - Cross-Reference Search
FHC122E Datasheet (PDF)
..1. Size:108K china
fhc122e.pdf
fhc122e.pdf
FHC122E PNP PCM TA=25 300 mW IC 50 mA Tjm 175 Tstg -55~175 ICVCEO 20 V 0.1mA IEVCBO 25 V 0.1mA ICEO VCE=10V 5.0 A IC=100mA VCEsat 1.5 V IB=1mA VCE=1V hFE 1000 IC=100mA 1. E 2. B 3. C
9.1. Size:130K china
fhc127.pdf
fhc127.pdf
FHC127(MJF127) PNP PCM Tc=25 30 W ICM 5 A Tjm 150 Tstg -55~150 V(BR) CEO ICE=100mA 100 V V(BR) CBO ICB=100mA 100 V V(BR) EBO IEB=20mA 5 V IEBO VEB=5V 2.0 mA ICBO VCB=100V 0.01 mA ICEO VCE=50V 0.01 mA IC=3A VCEsat 2.0 V IB=12mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
