FHD010 Datasheet. Specs and Replacement

Type Designator: FHD010  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO-3

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FHD010 datasheet

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FHD010

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China FHD010 NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a... See More ⇒

Detailed specifications: FHC11021, FHC122E, FHC127, FHC150, FHC30, FHC50, FHC6287, FHC70, D209L, FHD020, FHD030, FHD050, FHD075, FHD100, FHD11032, FHD122, FHD128B

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