All Transistors. FHD010 Datasheet

 

FHD010 Datasheet and Replacement


   Type Designator: FHD010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-3
 

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FHD010 Datasheet (PDF)

 ..1. Size:24K  shaanxi
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FHD010

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD010NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

Datasheet: FHC11021 , FHC122E , FHC127 , FHC150 , FHC30 , FHC50 , FHC6287 , FHC70 , BC556 , FHD020 , FHD030 , FHD050 , FHD075 , FHD100 , FHD11032 , FHD122 , FHD128B .

History: 2SD1938

Keywords - FHD010 transistor datasheet

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