All Transistors. FHD010 Datasheet

 

FHD010 Datasheet and Replacement


   Type Designator: FHD010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-3
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FHD010 Datasheet (PDF)

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FHD010

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD010NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N249 | 2N5031 | 2SA982 | 2SC3298A | 2SA416 | DMJT9435 | BDW25

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