FHD11032 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD11032
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO-3
FHD11032 Transistor Equivalent Substitute - Cross-Reference Search
FHD11032 Datasheet (PDF)
..1. Size:110K china
fhd11032.pdf
fhd11032.pdf
FHD11032(MJ11032) NPN PCM Tc=25 300 W ICM 50 A Tjm 175 Tstg -55~150 V(BR) CEO ICB=1mA 120 V V(BR)EBO ICE=5mA 8.0 V ICBO VCB=50V 2.0 mA ICEO VCE=50V 2.0 mA 3.5 VBEsat IC=10A V IB=0.1A VCEsat 3.5 VCE=5V IC=5A VCE=5V hFE 3000~9000 IC=10A V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
