All Transistors. FHD11032 Datasheet

 

FHD11032 Datasheet and Replacement


   Type Designator: FHD11032
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO-3
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FHD11032 Datasheet (PDF)

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 fhd11032.pdf pdf_icon

FHD11032

FHD11032(MJ11032) NPN PCM Tc=25 300 W ICM 50 A Tjm 175 Tstg -55~150 V(BR) CEO ICB=1mA 120 V V(BR)EBO ICE=5mA 8.0 V ICBO VCB=50V 2.0 mA ICEO VCE=50V 2.0 mA 3.5 VBEsat IC=10A V IB=0.1A VCEsat 3.5 VCE=5V IC=5A VCE=5V hFE 3000~9000 IC=10A V

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: BF316A | 2N2249 | BD130 | 2SD1866 | 2SB204 | BC547A | MM4209A

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