FHD11032 Datasheet. Specs and Replacement

Type Designator: FHD11032  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO-3

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FHD11032 datasheet

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FHD11032

FHD11032(MJ11032) NPN PCM Tc=25 300 W ICM 50 A Tjm 175 Tstg -55 150 V(BR) CEO ICB=1mA 120 V V(BR)EBO ICE=5mA 8.0 V ICBO VCB=50V 2.0 mA ICEO VCE=50V 2.0 mA 3.5 VBEsat IC=10A V IB=0.1A VCEsat 3.5 VCE=5V IC=5A VCE=5V hFE 3000 9000 IC=10A V... See More ⇒

Detailed specifications: FHC6287, FHC70, FHD010, FHD020, FHD030, FHD050, FHD075, FHD100, 2SD669A, FHD122, FHD128B, FHD150, FHD228G, FHD30, FHD4035, FHD491, FHD50

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