FHD128B Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD128B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-18
FHD128B Transistor Equivalent Substitute - Cross-Reference Search
FHD128B Datasheet (PDF)
fhd128b.pdf
FHD128B NPN PCM TA=25 700 mW IC 800 mA Tjm 175 Tstg -55~175 VCEO ICE0.1mA 20 V VCBO ICB0.1mA 25 V ICEO VCE=10V 5.0 A IC=100mA VCEsat 1.5 V IB=1mA VCE=1V hFE 1000 IC=100mA 1. E 2. B 3. C
fhd122.pdf
FHD122(MJF122) NPN PCM Tc=25 30 W ICM 5 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=20mA 100 V V(BR) CEO ICE=20mA 100 V V(BR)EBO ICE=20mA 5 V IEBO VEB=5V 2.0 V ICBO VCB=100V 0.01 mA ICEO VCE=50V 0.01 mA IC=3A VCEsat 2.0 V IB=12mA V
fhu120n03c fhd120n03c.pdf
N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
