All Transistors. FHD128B Datasheet

 

FHD128B Datasheet and Replacement


   Type Designator: FHD128B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-18
 

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FHD128B Datasheet (PDF)

 ..1. Size:107K  china
 fhd128b.pdf pdf_icon

FHD128B

FHD128B NPN PCM TA=25 700 mW IC 800 mA Tjm 175 Tstg -55~175 VCEO ICE0.1mA 20 V VCBO ICB0.1mA 25 V ICEO VCE=10V 5.0 A IC=100mA VCEsat 1.5 V IB=1mA VCE=1V hFE 1000 IC=100mA 1. E 2. B 3. C

 9.1. Size:148K  china
 fhd122.pdf pdf_icon

FHD128B

FHD122(MJF122) NPN PCM Tc=25 30 W ICM 5 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=20mA 100 V V(BR) CEO ICE=20mA 100 V V(BR)EBO ICE=20mA 5 V IEBO VEB=5V 2.0 V ICBO VCB=100V 0.01 mA ICEO VCE=50V 0.01 mA IC=3A VCEsat 2.0 V IB=12mA V

 9.2. Size:1114K  feihonltd
 fhu120n03c fhd120n03c.pdf pdf_icon

FHD128B

N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste

Datasheet: FHD010 , FHD020 , FHD030 , FHD050 , FHD075 , FHD100 , FHD11032 , FHD122 , 2222A , FHD150 , FHD228G , FHD30 , FHD4035 , FHD491 , FHD50 , FHD6058 , FHD651 .

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