FHD50 Datasheet and Replacement
Type Designator: FHD50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-3
FHD50 Substitution
FHD50 Datasheet (PDF)
fhd50.pdf

FHD50 NPN B C D E F G PCM Tc=25 50 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V ICBO VCB=20V 1.0 mA ICEO VCE=20V 1.0 mA VBEsat 2.5 V IC=5A
fhp50n06 fhu50n06d fhd50n06d.pdf

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt
Datasheet: FHD11032 , FHD122 , FHD128B , FHD150 , FHD228G , FHD30 , FHD4035 , FHD491 , 2SC828 , FHD6058 , FHD651 , FHD70 , FHD8766 , FJB5555 , FJL6920 , DMA30401 , DMA90401 .
Keywords - FHD50 transistor datasheet
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History: MPQ1000 | MJ16010



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