All Transistors. FHD651 Datasheet

 

FHD651 Datasheet and Replacement


   Type Designator: FHD651
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 62.5 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO-220 TO-257
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FHD651 Datasheet (PDF)

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FHD651

FHD651(BD651) NPN PCM Tc=25 62.5 W ICM 8 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=30mA 140 V V(BR) CEO ICE=30mA 120 V V(BR)EBO IEB=30mA 5 IEBO VEB=5V 5.0 mA ICEO VCE=60V 0.5 mA IC=3A VCEsat 2.0 V IB=12mA VCE=3V hFE 750 IC=3A

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMC26401 | 2SC4055 | BUL55A | 2SD978 | MJE5742G | 2SD2639 | BU941ZFP

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