FHD651 Datasheet. Specs and Replacement

Type Designator: FHD651  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62.5 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO-220 TO-257

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FHD651 datasheet

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FHD651

FHD651(BD651) NPN PCM Tc=25 62.5 W ICM 8 A Tjm 150 Tstg -55 150 V(BR) CBO ICB=30mA 140 V V(BR) CEO ICE=30mA 120 V V(BR)EBO IEB=30mA 5 IEBO VEB=5V 5.0 mA ICEO VCE=60V 0.5 mA IC=3A VCEsat 2.0 V IB=12mA VCE=3V hFE 750 IC=3A ... See More ⇒

Detailed specifications: FHD128B, FHD150, FHD228G, FHD30, FHD4035, FHD491, FHD50, FHD6058, TIP142, FHD70, FHD8766, FJB5555, FJL6920, DMA30401, DMA90401, DMC30401, DMC90401

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