FHD651 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD651
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 62.5 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO-220 TO-257
FHD651 Transistor Equivalent Substitute - Cross-Reference Search
FHD651 Datasheet (PDF)
..1. Size:124K china
fhd651.pdf
fhd651.pdf
FHD651(BD651) NPN PCM Tc=25 62.5 W ICM 8 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=30mA 140 V V(BR) CEO ICE=30mA 120 V V(BR)EBO IEB=30mA 5 IEBO VEB=5V 5.0 mA ICEO VCE=60V 0.5 mA IC=3A VCEsat 2.0 V IB=12mA VCE=3V hFE 750 IC=3A
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
