DMG50401 Datasheet. Specs and Replacement

Type Designator: DMG50401  📄📄 

SMD Transistor Code: A9

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 210

Noise Figure, dB: -

Package: SOT-363

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DMG50401 datasheet

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DMG50401

This product complies with the RoHS Directive (EU 2002/95/EC). DMG50401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG20401 in SMini6 type package Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Con... See More ⇒

Detailed specifications: DMC904F0, DMC904F1, DME20101, DME20102, DME20501, DME20B01, DME20C01, DMG21401, BC547, DMG90401, DMMT2907A, DMMT3904, DMR935E1, DMS935E1, DMS935E2, DTA114WCA, EMF23

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