All Transistors. DMG50401 Datasheet

 

DMG50401 Datasheet and Replacement


   Type Designator: DMG50401
   SMD Transistor Code: A9
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-363
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DMG50401 Datasheet (PDF)

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DMG50401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG50401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplificationDMG20401 in SMini6 type package Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Con

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BDS14SM | ST44 | 2N2551 | 2SC235 | 2SD1514 | MP3615 | 2SC955

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