All Transistors. DMG50401 Datasheet

 

DMG50401 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DMG50401
   SMD Transistor Code: A9
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-363

 DMG50401 Transistor Equivalent Substitute - Cross-Reference Search

   

DMG50401 Datasheet (PDF)

 ..1. Size:519K  panasonic
 dmg50401.pdf

DMG50401 DMG50401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG50401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplificationDMG20401 in SMini6 type package Package Features Code High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Con

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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