All Transistors. DMR935E1 Datasheet

 

DMR935E1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DMR935E1
   SMD Transistor Code: X4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 24 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-666

 DMR935E1 Transistor Equivalent Substitute - Cross-Reference Search

   

DMR935E1 Datasheet (PDF)

 ..1. Size:748K  panasonic
 dmr935e1.pdf

DMR935E1 DMR935E1

DMR935E1Silicon PNP epitaxial planar type (Tr)Silicon epitaxial planar type (CCD load device)For CCD output circuitsUnit: mm Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: X4 PackagingDMR935E10R Embossed t

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC5566

 

 
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