All Transistors. DMR935E1 Datasheet

 

DMR935E1 Datasheet and Replacement


   Type Designator: DMR935E1
   SMD Transistor Code: X4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 24 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-666
 

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DMR935E1 Datasheet (PDF)

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DMR935E1

DMR935E1Silicon PNP epitaxial planar type (Tr)Silicon epitaxial planar type (CCD load device)For CCD output circuitsUnit: mm Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: X4 PackagingDMR935E10R Embossed t

Datasheet: DME20501 , DME20B01 , DME20C01 , DMG21401 , DMG50401 , DMG90401 , DMMT2907A , DMMT3904 , 2N3055 , DMS935E1 , DMS935E2 , DTA114WCA , EMF23 , EMF24 , EMF5 , FJP13009H2TU , FJP1943 .

History: FT2955 | CI3417

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