DMR935E1 Datasheet. Specs and Replacement

Type Designator: DMR935E1  📄📄 

SMD Transistor Code: X4

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 24 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-666

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DMR935E1 datasheet

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DMR935E1

DMR935E1 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Unit mm Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) Marking Symbol X4 Packaging DMR935E10R Embossed t... See More ⇒

Detailed specifications: DME20501, DME20B01, DME20C01, DMG21401, DMG50401, DMG90401, DMMT2907A, DMMT3904, 2N3904, DMS935E1, DMS935E2, DTA114WCA, EMF23, EMF24, EMF5, FJP13009H2TU, FJP1943

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