DMS935E1 Datasheet. Specs and Replacement

Type Designator: DMS935E1  📄📄 

SMD Transistor Code: X0

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1300 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-666

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DMS935E1 datasheet

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DMS935E1

DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Unit mm DSC2G03 + CCD load device (Individual) Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) Marking Symbol X... See More ⇒

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DMS935E1

DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Unit mm DSC2G03 + CCD load device (Individual) Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) Marking Symbol X... See More ⇒

Detailed specifications: DME20B01, DME20C01, DMG21401, DMG50401, DMG90401, DMMT2907A, DMMT3904, DMR935E1, 2N2222, DMS935E2, DTA114WCA, EMF23, EMF24, EMF5, FJP13009H2TU, FJP1943, FJP2145

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