FJP5200 Datasheet. Specs and Replacement
Type Designator: FJP5200 📄📄
SMD Transistor Code: J5200R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO-220
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FJP5200 datasheet
January 2009 FJP5200 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features 1 High Current Capability IC = 17A. High Power Dissipation 80watts. TO-220 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excellent Gai... See More ⇒
Detailed specifications: DTA114WCA, EMF23, EMF24, EMF5, FJP13009H2TU, FJP1943, FJP2145, FJP2160D, S8050, FJPF2145, FJX992, FML10, FML9, FMMT413, FMMT42CSM, FMMT42DCSM, FMMT591CSM
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