RTE13LFM Datasheet. Specs and Replacement

Type Designator: RTE13LFM  📄📄 

SMD Transistor Code: X01

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT-363

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RTE13LFM datasheet

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 rte13lfm.pdf pdf_icon

RTE13LFM

PRELIMINARY RTE13LFM Composite Transistor Zener Diode Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RTE13LFM is compound transistor built with 2SC3052 chip 1.25 and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION... See More ⇒

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 rte13j1m.pdf pdf_icon

RTE13LFM

PRELIMINARY RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RTE13J1M is compound transistor built with correspond 1.25 INJ0001AX chip and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting ... See More ⇒

Detailed specifications: RT2A00AM1, RT2C00M, RT3W77M, RT3WLMM, RT3XBBM, RT3Y97M, RT3YA7M, RT3YB7M, TIP42C, RXT2222A, RXT2907A, S1015, S1815, S2000N, S2055N, S2SA1774G, S2SC4617G

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