All Transistors. RTE13LFM Datasheet

 

RTE13LFM Datasheet and Replacement


   Type Designator: RTE13LFM
   SMD Transistor Code: X01
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT-363
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RTE13LFM Datasheet (PDF)

 ..1. Size:266K  isahaya
 rte13lfm.pdf pdf_icon

RTE13LFM

PRELIMINARY RTE13LFM Composite Transistor Zener DiodeSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RTE13LFM is compound transistor built with 2SC3052 chip 1.25 and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION

 9.1. Size:279K  isahaya
 rte13j1m.pdf pdf_icon

RTE13LFM

PRELIMINARY RTE13J1M Composite Transistor Zener DiodeSilicon P-channel MOSFETOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RTE13J1M is compound transistor built with correspond 1.25 INJ0001AX chip and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N2904 | ECG185 | ECG332 | DTC124EEB | NXP3875G | 2N5784 | 2SA1488

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