RTE13LFM Datasheet, Equivalent, Cross Reference Search
Type Designator: RTE13LFM
SMD Transistor Code: X01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT-363
RTE13LFM Transistor Equivalent Substitute - Cross-Reference Search
RTE13LFM Datasheet (PDF)
1.1. rte13lfm.pdf 
Size:266K _upd
PRELIMINARY RTE13LFM Composite Transistor Zener Diode Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION 2.1 RTE13LFM is compound transistor built with 2SC3052 chip 1.25 and 8.2V Zener diode in SC-88 package. ① ⑥ FEATURE ② ⑤ Silicon epitaxial type Each transistor elements are independent. ④ ③ Mini package for easy mounting APPLICATION
5.1. rte13j1m.pdf Size:279K _upd
PRELIMINARY RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET OUTLINE DRAWING Unit：mm DESCRIPTION 2.1 RTE13J1M is compound transistor built with correspond 1.25 INJ0001AX chip and 8.2V Zener diode in SC-88 package. ① ⑥ FEATURE Silicon epitaxial type ② ⑤ Each transistor elements are independent. ④ ③ Mini package for easy mounting
Datasheet: RT2A00AM1 , RT2C00M , RT3W77M , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , MJE13003 , RXT2222A , RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G , S2SC4617G .
