All Transistors. RTE13LFM Datasheet

 

RTE13LFM Datasheet, Equivalent, Cross Reference Search

Type Designator: RTE13LFM

SMD Transistor Code: X01

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT-363

RTE13LFM Transistor Equivalent Substitute - Cross-Reference Search

 

RTE13LFM Datasheet (PDF)

1.1. rte13lfm.pdf Size:266K _upd

RTE13LFM
RTE13LFM

PRELIMINARY RTE13LFM Composite Transistor Zener Diode Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm DESCRIPTION 2.1 RTE13LFM is compound transistor built with 2SC3052 chip 1.25 and 8.2V Zener diode in SC-88 package. ① ⑥ FEATURE ② ⑤ Silicon epitaxial type Each transistor elements are independent. ④ ③ Mini package for easy mounting APPLICATION

5.1. rte13j1m.pdf Size:279K _upd

RTE13LFM
RTE13LFM

PRELIMINARY RTE13J1M Composite Transistor Zener Diode Silicon P-channel MOSFET OUTLINE DRAWING Unit:mm DESCRIPTION 2.1 RTE13J1M is compound transistor built with correspond 1.25 INJ0001AX chip and 8.2V Zener diode in SC-88 package. ① ⑥ FEATURE Silicon epitaxial type ② ⑤ Each transistor elements are independent. ④ ③ Mini package for easy mounting

Datasheet: RT2A00AM1 , RT2C00M , RT3W77M , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , MJE13003 , RXT2222A , RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G , S2SC4617G .

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