2S50 Datasheet and Replacement
Type Designator: 2S50
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector Current |Ic max|: 0.024 A
Max. Operating Junction Temperature (Tj): 65 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
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2S50 Datasheet (PDF)
mmix2s50n60b4d1.pdf

Advance Technical InformationVCES = 600VLow Gain IGBT MMIX2S50N60B4D1IC90 = 30Aw/ DiodeES1 G1 ES2G2 VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 50nsES1E1Short Circuit SOA Capability C1E2 C2 G1ES2G2E1Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V C1E2VCGR TJ = 25C to 150C, RGE = 1M 600 VC2VGES
Datasheet: 2S43 , 2S44 , 2S45 , 2S451 , 2S46 , 2S47 , 2S48 , 2S49 , BD140 , 2S501 , 2S502 , 2S503 , 2S51 , 2S512 , 2S52 , 2S53 , 2S54 .
History: S13003 | APT13003EZ | MJE13003H5 | TD13003SMD
Keywords - 2S50 transistor datasheet
2S50 cross reference
2S50 equivalent finder
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2S50 replacement
History: S13003 | APT13003EZ | MJE13003H5 | TD13003SMD



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