2S50 Datasheet. Specs and Replacement

Type Designator: 2S50  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.055 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector Current |Ic max|: 0.024 A

Max. Operating Junction Temperature (Tj): 65 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

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2S50 datasheet

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 mmix2s50n60b4d1.pdf pdf_icon

2S50

Advance Technical Information VCES = 600V Low Gain IGBT MMIX2S50N60B4D1 IC90 = 30A w/ Diode ES1 G1 ES2 G2 VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 50ns ES1 E1 Short Circuit SOA Capability C1E2 C2 G1 ES2 G2 E1 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V C1E2 VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C2 VGES ... See More ⇒

Detailed specifications: 2S43, 2S44, 2S45, 2S451, 2S46, 2S47, 2S48, 2S49, BC548, 2S501, 2S502, 2S503, 2S51, 2S512, 2S52, 2S53, 2S54

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