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2S50 Specs and Replacement

Type Designator: 2S50

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.055 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector Current |Ic max|: 0.024 A

Max. Operating Junction Temperature (Tj): 65 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

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2S50 datasheet

 0.1. Size:284K  ixys

 mmix2s50n60b4d1.pdf pdf_icon

2S50

Advance Technical Information VCES = 600V Low Gain IGBT MMIX2S50N60B4D1 IC90 = 30A w/ Diode ES1 G1 ES2 G2 VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 50ns ES1 E1 Short Circuit SOA Capability C1E2 C2 G1 ES2 G2 E1 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V C1E2 VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C2 VGES ... See More ⇒

Detailed specifications: 2S43 , 2S44 , 2S45 , 2S451 , 2S46 , 2S47 , 2S48 , 2S49 , BC337 , 2S501 , 2S502 , 2S503 , 2S51 , 2S512 , 2S52 , 2S53 , 2S54 .

History: 2S47 | 2S46

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