All Transistors. 2S50 Datasheet

 

2S50 Datasheet and Replacement


   Type Designator: 2S50
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.055 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector Current |Ic max|: 0.024 A
   Max. Operating Junction Temperature (Tj): 65 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO1
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2S50 Datasheet (PDF)

 0.1. Size:284K  ixys
mmix2s50n60b4d1.pdf pdf_icon

2S50

Advance Technical InformationVCES = 600VLow Gain IGBT MMIX2S50N60B4D1IC90 = 30Aw/ DiodeES1 G1 ES2G2 VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 50nsES1E1Short Circuit SOA Capability C1E2 C2 G1ES2G2E1Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V C1E2VCGR TJ = 25C to 150C, RGE = 1M 600 VC2VGES

Datasheet: 2S43 , 2S44 , 2S45 , 2S451 , 2S46 , 2S47 , 2S48 , 2S49 , BD140 , 2S501 , 2S502 , 2S503 , 2S51 , 2S512 , 2S52 , 2S53 , 2S54 .

History: S13003 | APT13003EZ | MJE13003H5 | TD13003SMD

Keywords - 2S50 transistor datasheet

 2S50 cross reference
 2S50 equivalent finder
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