2S50 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2S50
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector Current |Ic max|: 0.024 A
Max. Operating Junction Temperature (Tj): 65 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2S50 Transistor Equivalent Substitute - Cross-Reference Search
2S50 Datasheet (PDF)
0.1. Size:284K ixys
mmix2s50n60b4d1.pdf
mmix2s50n60b4d1.pdf
Advance Technical InformationVCES = 600VLow Gain IGBT MMIX2S50N60B4D1IC90 = 30Aw/ DiodeES1 G1 ES2G2 VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 50nsES1E1Short Circuit SOA Capability C1E2 C2 G1ES2G2E1Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V C1E2VCGR TJ = 25C to 150C, RGE = 1M 600 VC2VGES
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
