2S65 Specs and Replacement
Type Designator: 2S65
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Package: TO1
2S65 Substitution
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2S65 datasheet
FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.A General Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒
Detailed specifications: 2S56A , 2S57 , 2S58 , 2S59 , 2S60 , 2S60A , 2S61 , 2S64 , 2SD1047 , 2S701 , 2S702 , 2S703 , 2S711 , 2S712 , 2S720 , 2S721 , 2S722 .
Keywords - 2S65 pdf specs
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History: 2S64 | 2S61 | 2S58
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