All Transistors. 2S65 Datasheet

 

2S65 Datasheet and Replacement


   Type Designator: 2S65
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO1
 

 2S65 Substitution

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2S65 Datasheet (PDF)

 0.1. Size:870K  cn fx-semi
 fxn12s65f.pdf pdf_icon

2S65

FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.AGeneral Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

Datasheet: 2S56A , 2S57 , 2S58 , 2S59 , 2S60 , 2S60A , 2S61 , 2S64 , A733 , 2S701 , 2S702 , 2S703 , 2S711 , 2S712 , 2S720 , 2S721 , 2S722 .

History: MJ12002 | 2N1055 | 2SC588 | 2N1016C

Keywords - 2S65 transistor datasheet

 2S65 cross reference
 2S65 equivalent finder
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