2S65 Datasheet. Specs and Replacement

Type Designator: 2S65  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 65

Noise Figure, dB: -

Package: TO1

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2S65 datasheet

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2S65

FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.A General Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒

Detailed specifications: 2S56A, 2S57, 2S58, 2S59, 2S60, 2S60A, 2S61, 2S64, TIP3055, 2S701, 2S702, 2S703, 2S711, 2S712, 2S720, 2S721, 2S722

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