All Transistors. 2S65 Datasheet

 

2S65 Datasheet and Replacement


   Type Designator: 2S65
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO1
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2S65 Datasheet (PDF)

 0.1. Size:870K  cn fx-semi
 fxn12s65f.pdf pdf_icon

2S65

FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.AGeneral Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 12A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CTP1732 | BCX55-16 | 2SC3489 | DTA114TMFHA | RT2P01M | CP502 | MMBTA05L

Keywords - 2S65 transistor datasheet

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