DC8550B Specs and Replacement
Type Designator: DC8550B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO92
DC8550B Substitution
DC8550B detailed specifications
dc8550.pdf
DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist... See More ⇒
fdc855n.pdf
January 2008 FDC855N tm Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27m Features General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3A Semiconductor s advanced PowerTrench ... See More ⇒
Detailed specifications: CHT846BPTS , CHT857BTPTQ , CHT857BTPTR , CHT857BTPTS , CHT858BWPTQ , CHT858BWPTR , CHT858BWPTS , CHTA27XPT , 2N5551 , DC8550C , DC8550D , DC8550E , EB102 , FA1L3Z-L36 , FA1L3Z-L37 , FA1L3Z-L38 , KSC5802D .
History: KT723A | MUN5135T1G | 2SC2001-M | MUN5138
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