DC8550B
Datasheet, Equivalent, Cross Reference Search
Type Designator: DC8550B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package:
TO92
DC8550B
Transistor Equivalent Substitute - Cross-Reference Search
DC8550B
Datasheet (PDF)
8.1. Size:64K dc components
dc8550.pdf
DC COMPONENTS CO., LTD.DC8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist
9.1. Size:279K fairchild semi
fdc855n.pdf
January 2008FDC855NtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3ASemiconductors advanced PowerTrench
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