All Transistors. DC8550D Datasheet

 

DC8550D Datasheet and Replacement


   Type Designator: DC8550D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92

 DC8550D Transistor Equivalent Substitute - Cross-Reference Search

   

DC8550D Datasheet (PDF)

 8.1. Size:64K  dc components
 dc8550.pdf pdf_icon

DC8550D

DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

 9.1. Size:279K  fairchild semi
 fdc855n.pdf pdf_icon

DC8550D

January 2008 FDC855N tm Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27m Features General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3A Semiconductor s advanced PowerTrench

Datasheet: CHT857BTPTR , CHT857BTPTS , CHT858BWPTQ , CHT858BWPTR , CHT858BWPTS , CHTA27XPT , DC8550B , DC8550C , C1815 , DC8550E , EB102 , FA1L3Z-L36 , FA1L3Z-L37 , FA1L3Z-L38 , KSC5802D , KTC601UY , NP061A3 .

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