All Transistors. DC8550D Datasheet

 

DC8550D Datasheet and Replacement


   Type Designator: DC8550D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92
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DC8550D Datasheet (PDF)

 8.1. Size:64K  dc components
 dc8550.pdf pdf_icon

DC8550D

DC COMPONENTS CO., LTD.DC8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist

 9.1. Size:279K  fairchild semi
 fdc855n.pdf pdf_icon

DC8550D

January 2008FDC855NtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3ASemiconductors advanced PowerTrench

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: MMS9018-L | B772O | BC558BTA | BF224

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