UNR5216 Datasheet and Replacement
Type Designator: UNR5216
SMD Transistor Code: 8F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SC70
UNR5216 Substitution
UNR5216 Datasheet (PDF)
unr521x un521x series.pdf

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(
Datasheet: UN921TJ , UNR921VJ , UNR5210 , UNR5211 , UNR5212 , UNR5213 , UNR5214 , UNR5215 , 2SC2240 , UNR5217 , UNR5218 , UNR5219 , UNR521D , UNR521E , UNR521F , UNR521K , UNR521L .
History: AFY15 | DDA143TU | KCW31
Keywords - UNR5216 transistor datasheet
UNR5216 cross reference
UNR5216 equivalent finder
UNR5216 lookup
UNR5216 substitution
UNR5216 replacement
History: AFY15 | DDA143TU | KCW31



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