UNR511N Datasheet. Specs and Replacement
Type Designator: UNR511N 📄📄
SMD Transistor Code: EW
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC70
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UNR511N datasheet
Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)... See More ⇒
Detailed specifications: UNR5118, UNR5119, UNR511D, UNR511E, UNR511F, UNR511H, UNR511L, UNR511M, A1941, UNR511T, UNR511V, UNR511Z, UN5110, UN5111, UN5112, UN5113, UN5114
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