All Transistors. MJB32B Datasheet

 

MJB32B Datasheet and Replacement


   Type Designator: MJB32B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-263
 

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MJB32B Datasheet (PDF)

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MJB32B

MJB32BPNP SILICON POWER TRANSISTOR SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP32BAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 3DESCRIPTION 1The MJB32B is manufactured usingEpitaxial-base Technology for use in mediumD2PAKpower linear and switching applications.(TO-263)(Suffix "T4")INTERNAL S

Datasheet: BU457 , BU458 , BU459 , BUF405AF , BUL1203E , FJL6820 , KT8232A , KT8232B , TIP35C , UPA801TC-FB , UPA801TC-GB , UPA805T , 2SA1069-Z , 2SA1261-Z , 2SA1358-Z , 2SAR586D3 , 2SB1261-K .

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