MJB32B Datasheet. Specs and Replacement
Type Designator: MJB32B 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-263
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MJB32B datasheet
MJB32B PNP SILICON POWER TRANSISTOR SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP32B APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 DESCRIPTION 1 The MJB32B is manufactured using Epitaxial-base Technology for use in medium D2PAK power linear and switching applications. (TO-263) (Suffix "T4") INTERNAL S... See More ⇒
Detailed specifications: BU457, BU458, BU459, BUF405AF, BUL1203E, FJL6820, KT8232A, KT8232B, BC546, UPA801TC-FB, UPA801TC-GB, UPA805T, 2SA1069-Z, 2SA1261-Z, 2SA1358-Z, 2SAR586D3, 2SB1261-K
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