MJB32B Datasheet, Equivalent, Cross Reference Search
Type Designator: MJB32B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-263
MJB32B Transistor Equivalent Substitute - Cross-Reference Search
MJB32B Datasheet (PDF)
1.1. mjb32b.pdf 
Size:121K _update_bjt
MJB32B ® PNP SILICON POWER TRANSISTOR SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP32B APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 DESCRIPTION 1 The MJB32B is manufactured using Epitaxial-base Technology for use in medium D2PAK power linear and switching applications. (TO-263) (Suffix "T4") INTERNAL S
Datasheet: T2393 , T2415 , T2417 , T2418 , T2448 , T2452 , T2453 , T2454 , 8050 , T2469 , T2470 , T2471 , T2472 , T2478 , T2479 , T2490 , T2491 .
