QM5HG-24 Datasheet, Equivalent, Cross Reference Search
Type Designator: QM5HG-24
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO-3PN
QM5HG-24 Transistor Equivalent Substitute - Cross-Reference Search
QM5HG-24 Datasheet (PDF)
0.1. qm5hg-24.pdf 
Size:46K _1
MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • IC Collector current ............................ 5A • VCEX Collector-emitter voltage ......... 1200V • hFE DC current gain................................. 5 • Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensio
0.2. qm5hg-24.pdf Size:183K _inchange_semiconductor
isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage- : V = 1200V(Min) CBO ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
