QM5HG-24 Datasheet, Equivalent, Cross Reference Search
Type Designator: QM5HG-24
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO-3PN
QM5HG-24 Transistor Equivalent Substitute - Cross-Reference Search
QM5HG-24 Datasheet (PDF)
qm5hg-24.pdf
MITSUBISHI TRANSISTOR MODULESQM5HG-24MEDIUM POWER SWITCHING USENON-INSULATED TYPEQM5HG-24 IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated TypeAPPLICATIONBase driver for High voltage transistor modulesOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensio
qm5hg-24.pdf
isc Silicon NPN Power Transistor QM5HG-24DESCRIPTIONHigh Power Handling capacityHigh Collector-Base Voltage-: V = 1200V(Min)CBOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSBase driver for High voltage transistor modulesABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBO
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KT8272B
