QM5HG-24 Datasheet. Specs and Replacement

Type Designator: QM5HG-24  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 1200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-3PN

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QM5HG-24 datasheet

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QM5HG-24

MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensio... See More ⇒

 ..2. Size:183K  inchange semiconductor

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QM5HG-24

isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION High Power Handling capacity High Collector-Base Voltage- V = 1200V(Min) CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO ... See More ⇒

Detailed specifications: DK151G, DS15, J6920, KSA940TU, KSC2073TU, MJE15036, MJE15037, MJF13005, BD177, S2530A, TIP127B, TIP35AB, TIP35AT, TIP36AB, TIP36AT, UM8168L, SS8550-L

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