All Transistors. QM5HG-24 Datasheet

 

QM5HG-24 Datasheet, Equivalent, Cross Reference Search

Type Designator: QM5HG-24

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 1200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-3PN

QM5HG-24 Transistor Equivalent Substitute - Cross-Reference Search

 

QM5HG-24 Datasheet (PDF)

0.1. qm5hg-24.pdf Size:46K _1

QM5HG-24
QM5HG-24

MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • IC Collector current ............................ 5A • VCEX Collector-emitter voltage ......... 1200V • hFE DC current gain................................. 5 • Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensio

0.2. qm5hg-24.pdf Size:183K _inchange_semiconductor

QM5HG-24
QM5HG-24

isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage- : V = 1200V(Min) CBO ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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