ISCP233N Datasheet. Specs and Replacement

Type Designator: ISCP233N  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PN

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ISCP233N datasheet

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ISCP233N

isc Silicon PNP Power Transistor ISCP233N DESCRIPTION Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO High DC Current Gain- h = 60-200@I = -1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY... See More ⇒

Detailed specifications: TMPTA70, TMPTA92, TMPTA93, TMPTH81, 2SD1047-247, 3CD010G, 3DD6E, ISCN341N, BC557, KSE340J, KSE350J, KSH13005, 2SC3866A, 3DK501D, 3DA77, 3DF5B, ISCN366P

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