ISCP233N Datasheet, Equivalent, Cross Reference Search
Type Designator: ISCP233N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3PN
ISCP233N Transistor Equivalent Substitute - Cross-Reference Search
ISCP233N Datasheet (PDF)
..1. Size:244K inchange semiconductor
iscp233n.pdf
iscp233n.pdf
isc Silicon PNP Power Transistor ISCP233NDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh DC Current Gain-: h = 60-200@I = -1AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC5368 | BC868 | MPS2715
