ISCP233N PDF and Equivalents Search

 

ISCP233N PDF Specs and Replacement


   Type Designator: ISCP233N
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3PN
 

 ISCP233N Substitution

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ISCP233N PDF detailed specifications

 ..1. Size:244K  inchange semiconductor
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ISCP233N

isc Silicon PNP Power Transistor ISCP233N DESCRIPTION Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO High DC Current Gain- h = 60-200@I = -1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY... See More ⇒

Detailed specifications: TMPTA70 , TMPTA92 , TMPTA93 , TMPTH81 , 2SD1047-247 , 3CD010G , 3DD6E , ISCN341N , BC557 , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P .

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