All Transistors. ISCP233N Datasheet

 

ISCP233N Datasheet, Equivalent, Cross Reference Search

Type Designator: ISCP233N

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PN

ISCP233N Transistor Equivalent Substitute - Cross-Reference Search

 

ISCP233N Datasheet (PDF)

..1. iscp233n.pdf Size:244K _inchange_semiconductor

ISCP233N
ISCP233N

isc Silicon PNP Power Transistor ISCP233NDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh DC Current Gain-: h = 60-200@I = -1AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC558 , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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