All Transistors. ISCP233N Datasheet

 

ISCP233N Datasheet and Replacement


   Type Designator: ISCP233N
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3PN
 

 ISCP233N Substitution

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ISCP233N Datasheet (PDF)

 ..1. Size:244K  inchange semiconductor
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ISCP233N

isc Silicon PNP Power Transistor ISCP233NDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh DC Current Gain-: h = 60-200@I = -1AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY

Datasheet: TMPTA70 , TMPTA92 , TMPTA93 , TMPTH81 , 2SD1047-247 , 3CD010G , 3DD6E , ISCN341N , TIP122 , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P .

History: 2SD5702

Keywords - ISCP233N transistor datasheet

 ISCP233N cross reference
 ISCP233N equivalent finder
 ISCP233N lookup
 ISCP233N substitution
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