3DK501D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DK501D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DK501D Transistor Equivalent Substitute - Cross-Reference Search
3DK501D Datasheet (PDF)
3dk501d.pdf
isc Silicon NPN Power Transistor 3DK501DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min.)(BR)CEODC Current Gain: h = 20(Min.)@I = 10AFE CCollector-Emitter Saturation Voltage-: V )= 1.2V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regul
3dk50.pdf
3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55~150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB
Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N2222 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
