3DK501D Datasheet. Specs and Replacement

Type Designator: 3DK501D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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3DK501D datasheet

 ..1. Size:237K  inchange semiconductor

 3dk501d.pdf pdf_icon

3DK501D

isc Silicon NPN Power Transistor 3DK501D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min.) (BR)CEO DC Current Gain h = 20(Min.)@I = 10A FE C Collector-Emitter Saturation Voltage- V )= 1.2V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regul... See More ⇒

 9.1. Size:113K  china

 3dk50.pdf pdf_icon

3DK501D

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55 150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB... See More ⇒

Detailed specifications: 3CD010G, 3DD6E, ISCN341N, ISCP233N, KSE340J, KSE350J, KSH13005, 2SC3866A, BC327, 3DA77, 3DF5B, ISCN366P, ISCN372M, ISCN372N, SSCP005GSB, SJT13009NT, 2N5401B

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