All Transistors. 3DK501D Datasheet

 

3DK501D Datasheet and Replacement


   Type Designator: 3DK501D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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3DK501D Datasheet (PDF)

 ..1. Size:237K  inchange semiconductor
 3dk501d.pdf pdf_icon

3DK501D

isc Silicon NPN Power Transistor 3DK501DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min.)(BR)CEODC Current Gain: h = 20(Min.)@I = 10AFE CCollector-Emitter Saturation Voltage-: V )= 1.2V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regul

 9.1. Size:113K  china
 3dk50.pdf pdf_icon

3DK501D

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55~150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB

Datasheet: 3CD010G , 3DD6E , ISCN341N , ISCP233N , KSE340J , KSE350J , KSH13005 , 2SC3866A , 100DA025D , 3DA77 , 3DF5B , ISCN366P , ISCN372M , ISCN372N , SSCP005GSB , SJT13009NT , 2N5401B .

History: 2N6192 | 2SD2387C | 40538S | 2SA276 | UN4117S | 2SD2390Y | 2SC6026MFV-GR

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