All Transistors. 3DK501D Datasheet

 

3DK501D Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK501D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

3DK501D Transistor Equivalent Substitute - Cross-Reference Search

 

3DK501D Datasheet (PDF)

..1. 3dk501d.pdf Size:237K _inchange_semiconductor

3DK501D 3DK501D

isc Silicon NPN Power Transistor 3DK501DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min.)(BR)CEODC Current Gain: h = 20(Min.)@I = 10AFE CCollector-Emitter Saturation Voltage-: V )= 1.2V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regul

9.1. 3dk50.pdf Size:113K _china

3DK501D

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55~150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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