3DF5B Datasheet. Specs and Replacement

Type Designator: 3DF5B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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3DF5B datasheet

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3DF5B

isc Silicon NPN Power Transistor 3DF5B DESCRIPTION With TO-3 packaging Excellent Safe Operating Area DC Current Gain- h =15(Min)@I = 2.5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid... See More ⇒

Detailed specifications: ISCN341N, ISCP233N, KSE340J, KSE350J, KSH13005, 2SC3866A, 3DK501D, 3DA77, 2SD718, ISCN366P, ISCN372M, ISCN372N, SSCP005GSB, SJT13009NT, 2N5401B, 2N5401B-Y1, 2N5401B-Y2

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