BFP780 Datasheet, Equivalent, Cross Reference Search

Type Designator: BFP780

SMD Transistor Code: R1*

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 6.1 V

Maximum Collector Current |Ic max|: 0.12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20000 MHz

Collector Capacitance (Cc): 0.37 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT343

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BFP780 Datasheet (PDF)

 ..1. Size:475K  infineon
 bfp780.pdf

BFP780High linearity RF medium power transistorProduct descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .