All Transistors. BFP780 Datasheet

 

BFP780 Datasheet and Replacement


   Type Designator: BFP780
   SMD Transistor Code: R1*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6.1 V
   Maximum Collector Current |Ic max|: 0.12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Collector Capacitance (Cc): 0.37 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT343
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BFP780 Datasheet (PDF)

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BFP780

BFP780High linearity RF medium power transistorProduct descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz,

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 181T2 | PH1214-100EL

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