All Transistors. BFP780 Datasheet

 

BFP780 Datasheet and Replacement


   Type Designator: BFP780
   SMD Transistor Code: R1*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6.1 V
   Maximum Collector Current |Ic max|: 0.12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Collector Capacitance (Cc): 0.37 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT343
 

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BFP780 Datasheet (PDF)

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BFP780

BFP780High linearity RF medium power transistorProduct descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz,

Datasheet: BFP720 , BFP720ESD , BFP720F , BFP720FESD , BFP740ESD , BFP740F , BFP740FESD , BFP760 , A1013 , BFP840ESD , BFP840FESD , BFP842ESD , BFP843 , BFP843F , BFQ790 , BFR193F , BFR193L3 .

History: 2SC3055 | CMKT5089M10 | 2SC3945

Keywords - BFP780 transistor datasheet

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