BFP780 Datasheet. Specs and Replacement
Type Designator: BFP780 📄📄
SMD Transistor Code: R1*
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6.1 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 0.37 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT343
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BFP780 Substitution
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BFP780 datasheet
BFP780 High linearity RF medium power transistor Product description The BFP780 is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz, ... See More ⇒
Detailed specifications: BFP720, BFP720ESD, BFP720F, BFP720FESD, BFP740ESD, BFP740F, BFP740FESD, BFP760, SS8050, BFP840ESD, BFP840FESD, BFP842ESD, BFP843, BFP843F, BFQ790, BFR193F, BFR193L3
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