BFP780 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP780
SMD Transistor Code: R1*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6.1 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 0.37 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT343
BFP780 Transistor Equivalent Substitute - Cross-Reference Search
BFP780 Datasheet (PDF)
bfp780.pdf

BFP780High linearity RF medium power transistorProduct descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz,
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .