BFP780 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP780
SMD Transistor Code: R1*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6.1 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 0.37 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: SOT343
BFP780 Transistor Equivalent Substitute - Cross-Reference Search
BFP780 Datasheet (PDF)
..1. Size:475K infineon
bfp780.pdf
bfp780.pdf
BFP780High linearity RF medium power transistorProduct descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.Feature list High maximum RF input power PRFin,max = 20 dBm Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA OP1dB = 23 dBm at 900 MHz,
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
