2SA1196 Datasheet. Specs and Replacement

Type Designator: 2SA1196  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO202

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2SA1196 datasheet

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2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak ... See More ⇒

Detailed specifications: 2SA1189, 2SA119, 2SA1190, 2SA1191, 2SA1193, 2SA1194, 2SA1194K, 2SA1195, 2N3906, 2SA1197, 2SA1198, 2SA1198S, 2SA1199, 2SA1199S, 2SA12, 2SA120, 2SA1200

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