All Transistors. 2SA1196 Datasheet

 

2SA1196 Datasheet and Replacement


   Type Designator: 2SA1196
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO202
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2SA1196 Datasheet (PDF)

 8.1. Size:105K  1
2sa1198s 2sa1199s.pdf pdf_icon

2SA1196

 8.2. Size:126K  toshiba
2sa1195.pdf pdf_icon

2SA1196

 8.3. Size:118K  rohm
2sa1199.pdf pdf_icon

2SA1196

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 8.4. Size:34K  hitachi
2sa1193.pdf pdf_icon

2SA1196

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1817 | 2SA1105 | 2N4247 | 2SA1166A | 2SA117 | 2N4244 | 2SA1020Y

Keywords - 2SA1196 transistor datasheet

 2SA1196 cross reference
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