2SA1196 Datasheet and Replacement
Type Designator: 2SA1196
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO202
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2SA1196 Datasheet (PDF)
2sa1199.pdf

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2sa1193.pdf

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1817 | 2SA1105 | 2N4247 | 2SA1166A | 2SA117 | 2N4244 | 2SA1020Y
Keywords - 2SA1196 transistor datasheet
2SA1196 cross reference
2SA1196 equivalent finder
2SA1196 lookup
2SA1196 substitution
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History: 2N1817 | 2SA1105 | 2N4247 | 2SA1166A | 2SA117 | 2N4244 | 2SA1020Y



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