B772E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

B772E Specs and Replacement

Type Designator: B772E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80(typ) MHz

Collector Capacitance (Cc): 55(typ) pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

B772E Substitution

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B772E datasheet

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D882 AO3400 SI2305 B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Pea... See More ⇒

Detailed specifications: SS8550-Y2-H , SS8550-Y2-J , SS8550-Y2-L , 29012H , 2SC4617Q , 2SC4617R , 2SC4617S , 3DD13003F6 , TIP127 , B772Q , D882E , MMBT3904N3 , MMBTH10A , MMBTH10B , MMBTH10C , PXT8050-D1 , PXT8050-D2 .