B772Q Datasheet. Specs and Replacement

Type Designator: B772Q  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 typ MHz

Collector Capacitance (Cc): 55 typ pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

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B772Q datasheet

 ..1. Size:751K  cn twgmc

 b772r b772q b772p b772e.pdf pdf_icon

B772Q

D882 AO3400 SI2305 B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Pea... See More ⇒

 0.1. Size:131K  lrc

 l2sb772q.pdf pdf_icon

B772Q

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB772Q L2SB772P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB772Q 72Q 2500/Tape&Reel 2,4 L2SB772P 72P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas... See More ⇒

Detailed specifications: SS8550-Y2-J, SS8550-Y2-L, 29012H, 2SC4617Q, 2SC4617R, 2SC4617S, 3DD13003F6, B772E, 2SD313, D882E, MMBT3904N3, MMBTH10A, MMBTH10B, MMBTH10C, PXT8050-D1, PXT8050-D2, PXT8550D1

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