All Transistors. B772Q Datasheet

 

B772Q Datasheet and Replacement


   Type Designator: B772Q
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(typ) MHz
   Collector Capacitance (Cc): 55(typ) pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

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B772Q Datasheet (PDF)

 ..1. Size:751K  cn twgmc
 b772r b772q b772p b772e.pdf pdf_icon

B772Q

D882AO3400SI2305B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPea

 0.1. Size:131K  lrc
 l2sb772q.pdf pdf_icon

B772Q

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

Datasheet: SS8550-Y2-J , SS8550-Y2-L , 29012H , 2SC4617Q , 2SC4617R , 2SC4617S , 3DD13003F6 , B772E , BC558 , D882E , MMBT3904N3 , MMBTH10A , MMBTH10B , MMBTH10C , PXT8050-D1 , PXT8050-D2 , PXT8550D1 .

Keywords - B772Q transistor datasheet

 B772Q cross reference
 B772Q equivalent finder
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