All Transistors. D882E Datasheet

 

D882E Datasheet and Replacement


   Type Designator: D882E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90(typ) MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
 

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D882E Datasheet (PDF)

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D882E

D882AO3400SI2305D882NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10

Datasheet: SS8550-Y2-L , 29012H , 2SC4617Q , 2SC4617R , 2SC4617S , 3DD13003F6 , B772E , B772Q , TIP42 , MMBT3904N3 , MMBTH10A , MMBTH10B , MMBTH10C , PXT8050-D1 , PXT8050-D2 , PXT8550D1 , PXT8550D2 .

History: 2N3216 | 2SA884 | 2N3961

Keywords - D882E transistor datasheet

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