D882E Datasheet. Specs and Replacement

Type Designator: D882E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 typ MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

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D882E datasheet

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D882E

D882 AO3400 SI2305 D882 NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10... See More ⇒

Detailed specifications: SS8550-Y2-L, 29012H, 2SC4617Q, 2SC4617R, 2SC4617S, 3DD13003F6, B772E, B772Q, BC558, MMBT3904N3, MMBTH10A, MMBTH10B, MMBTH10C, PXT8050-D1, PXT8050-D2, PXT8550D1, PXT8550D2

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