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D882E Specs and Replacement

Type Designator: D882E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90(typ) MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

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D882E datasheet

 ..1. Size:301K  cn twgmc

 d882r d882q d882p d882e.pdf pdf_icon

D882E

D882 AO3400 SI2305 D882 NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10... See More ⇒

Detailed specifications: SS8550-Y2-L , 29012H , 2SC4617Q , 2SC4617R , 2SC4617S , 3DD13003F6 , B772E , B772Q , 2SD2499 , MMBT3904N3 , MMBTH10A , MMBTH10B , MMBTH10C , PXT8050-D1 , PXT8050-D2 , PXT8550D1 , PXT8550D2 .

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