All Transistors. TP5001P3 Datasheet

 

TP5001P3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TP5001P3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 0.95 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: DFN1006-3L

 TP5001P3 Transistor Equivalent Substitute - Cross-Reference Search

   

TP5001P3 Datasheet (PDF)

 ..1. Size:353K  cn tech public
tp5001p3.pdf

TP5001P3
TP5001P3

TP5001P3www.sot23.com.twwww.sot23.com.twTP5001P3

 9.1. Size:103K  motorola
tp5002sr.pdf

TP5001P3
TP5001P3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballast

 9.2. Size:211K  hgsemi
tp5002.pdf

TP5001P3

HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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