TP5001P3 Datasheet, Equivalent, Cross Reference Search

Type Designator: TP5001P3

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 0.95 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: DFN1006-3L

TP5001P3 Transistor Equivalent Substitute - Cross-Reference Search

 

BUY TRANSISTORS

 

TP5001P3 Datasheet (PDF)

 ..1. Size:353K  cn tech public
 tp5001p3.pdf

TP5001P3www.sot23.com.twwww.sot23.com.twTP5001P3

 9.1. Size:103K  motorola
 tp5002sr.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballast

 9.2. Size:211K  hgsemi
 tp5002.pdf

HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , TIP36C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .