TP5001P3 Datasheet, Equivalent, Cross Reference Search
Type Designator: TP5001P3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 0.95 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: DFN1006-3L
TP5001P3 Transistor Equivalent Substitute - Cross-Reference Search
TP5001P3 Datasheet (PDF)
tp5002sr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballastresistors for reliability and ruggedness. The TP5002S was specifically designedas a low power driver with high gain and can be operated in Class A, B or C. 380512 MHz 1.5 W Pout
tp5002.pdf
HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
