All Transistors. 2SA197 Datasheet

 

2SA197 Datasheet and Replacement


   Type Designator: 2SA197
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO1
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2SA197 Datasheet (PDF)

 0.1. Size:191K  toshiba
2sa1972.pdf pdf_icon

2SA197

 0.2. Size:194K  toshiba
2sa1971.pdf pdf_icon

2SA197

 0.3. Size:44K  sanyo
2sa1973 2sc5310.pdf pdf_icon

2SA197

Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16

 0.4. Size:60K  nec
2sa1978.pdf pdf_icon

2SA197

DATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICROWAVE AMPLIFIERFEATURES PACKAGE DIMENSIONSHigh f (in milimeters)T_2.8+0.2f = 5.5 GHz TYP.T+0.1| S | 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.1521e CE CHigh speed switching characteristicsEquivalent NPN transistor is the 2SC2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DG535 | KTC2553 | NSVBC847BDW1T2G | MP25 | KT3128A-1 | BTA1012E3 | GSDR10025

Keywords - 2SA197 transistor datasheet

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