2SA197 Datasheet. Specs and Replacement

Type Designator: 2SA197  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO1

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2SA197 datasheet

 0.1. Size:191K  toshiba

2sa1972.pdf pdf_icon

2SA197

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 0.2. Size:194K  toshiba

2sa1971.pdf pdf_icon

2SA197

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 0.3. Size:44K  sanyo

2sa1973 2sc5310.pdf pdf_icon

2SA197

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16... See More ⇒

 0.4. Size:60K  nec

2sa1978.pdf pdf_icon

2SA197

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High f (in milimeters) T _ 2.8+0.2 f = 5.5 GHz TYP. T +0.1 S 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.15 21e CE C High speed switching characteristics Equivalent NPN transistor is the 2SC2... See More ⇒

Detailed specifications: 2SA192, 2SA193, 2SA194, 2SA195, 2SA1958, 2SA196, 2SA1967, 2SA1968, TIP32C, 2SA198, 2SA199, 2SA20, 2SA200, 2SA201, 2SA202, 2SA203, 2SA204

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