2SA647 Specs and Replacement
Type Designator: 2SA647
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO202
2SA647 Substitution
- BJT ⓘ Cross-Reference Search
2SA647 datasheet
isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
Detailed specifications: 2SA639S , 2SA64 , 2SA640 , 2SA641 , 2SA642 , 2SA643 , 2SA645 , 2SA646 , 13005 , 2SA648 , 2SA649 , 2SA65 , 2SA650 , 2SA651 , 2SA652 , 2SA653 , 2SA653A .
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