All Transistors. 2SA647 Datasheet

 

2SA647 Datasheet and Replacement


   Type Designator: 2SA647
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 7 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO202
 
   - BJT ⓘ Cross-Reference Search

   

2SA647 Datasheet (PDF)

 9.1. Size:39K  no
 2sa641.pdf pdf_icon

2SA647

 9.2. Size:82K  usha
 2sa642.pdf pdf_icon

2SA647

Transistors2SA642

 9.3. Size:82K  usha
 2sa643.pdf pdf_icon

2SA647

Transistors2SA643

 9.4. Size:189K  inchange semiconductor
 2sa648.pdf pdf_icon

2SA647

isc Silicon PNP Power Transistor 2SA648DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

SHOW MORE

Datasheet: 2SA639S , 2SA64 , 2SA640 , 2SA641 , 2SA642 , 2SA643 , 2SA645 , 2SA646 , S9013 , 2SA648 , 2SA649 , 2SA65 , 2SA650 , 2SA651 , 2SA652 , 2SA653 , 2SA653A .

History: MMBT3641

Keywords - 2SA647 transistor datasheet

 2SA647 cross reference
 2SA647 equivalent finder
 2SA647 lookup
 2SA647 substitution
 2SA647 replacement

 

 
Back to Top

 


 
.