2SA647 Datasheet and Replacement
Type Designator: 2SA647
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO202
2SA647 Datasheet (PDF)
2sa648.pdf

isc Silicon PNP Power Transistor 2SA648DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: 2SA639S , 2SA64 , 2SA640 , 2SA641 , 2SA642 , 2SA643 , 2SA645 , 2SA646 , S9013 , 2SA648 , 2SA649 , 2SA65 , 2SA650 , 2SA651 , 2SA652 , 2SA653 , 2SA653A .
History: 2SC432
Keywords - 2SA647 transistor datasheet
2SA647 cross reference
2SA647 equivalent finder
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History: 2SC432



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