2SA647 Datasheet and Replacement
Type Designator: 2SA647
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO202
2SA647 Datasheet (PDF)
2sa648.pdf

isc Silicon PNP Power Transistor 2SA648DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: PT901-1 | RT2P02M | 2SD743 | 17375 | KTD1415V | 2SC466
Keywords - 2SA647 transistor datasheet
2SA647 cross reference
2SA647 equivalent finder
2SA647 lookup
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2SA647 replacement
History: PT901-1 | RT2P02M | 2SD743 | 17375 | KTD1415V | 2SC466



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