2SA965Y Specs and Replacement
Type Designator: 2SA965Y
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
2SA965Y Substitution
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2SA965Y datasheet
2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications B CLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y K E F Range 80-160 120-240 C N G H 1 Emitter 1 1 1 2 Collector 2 ... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA965 DESCRIPTION Power amplifier applications Driver stage amplifier applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB... See More ⇒
Detailed specifications: 2SA96 , 2SA962 , 2SA962A , 2SA963 , 2SA964 , 2SA964A , 2SA965 , 2SA965O , S8050 , 2SA966 , 2SA966O , 2SA966Y , 2SA967 , 2SA968 , 2SA968A , 2SA968B , 2SA969 .
History: 2SA957
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History: 2SA957
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