All Transistors. 2SA965Y Datasheet

 

2SA965Y Datasheet and Replacement


   Type Designator: 2SA965Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

2SA965Y Datasheet (PDF)

 8.1. Size:173K  toshiba
 2sa965.pdf pdf_icon

2SA965Y

 8.2. Size:78K  secos
 2sa965tm.pdf pdf_icon

2SA965Y

2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications BCLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y KE FRange 80-160 120-240 CNG H1 Emitter 1112 Collector 2

 8.3. Size:213K  inchange semiconductor
 2sa965.pdf pdf_icon

2SA965Y

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA965DESCRIPTIONPower amplifier applicationsDriver stage amplifier applicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CSD313D | HTIP41C | MJE13009P | BF494A | ST13009 | 2SA1943RTU | 2SC1400U

Keywords - 2SA965Y transistor datasheet

 2SA965Y cross reference
 2SA965Y equivalent finder
 2SA965Y lookup
 2SA965Y substitution
 2SA965Y replacement

 

 
Back to Top

 


 
.