2SA965Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA965Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
2SA965Y Transistor Equivalent Substitute - Cross-Reference Search
2SA965Y Datasheet (PDF)
2sa965tm.pdf
2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications BCLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y KE FRange 80-160 120-240 CNG H1 Emitter 1112 Collector 2
2sa965.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA965DESCRIPTIONPower amplifier applicationsDriver stage amplifier applicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
