2SB1558C Datasheet. Specs and Replacement

Type Designator: 2SB1558C  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO264

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2SB1558C datasheet

 7.1. Size:184K  toshiba

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2SB1558C

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 7.2. Size:155K  jmnic

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2SB1558C

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER COND... See More ⇒

 7.3. Size:237K  inchange semiconductor

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2SB1558C

isc Silicon PNP Darlington Power Transistor 2SB1558 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATING... See More ⇒

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Detailed specifications: 2SB1556C, 2SB1557, 2SB1557A, 2SB1557B, 2SB1557C, 2SB1558, 2SB1558A, 2SB1558B, C5198, 2SB1559, 2SB156, 2SB1560, 2SB1562, 2SB156A, 2SB157, 2SB1570, 2SB158

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