2SD2440 Todos los transistores

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit mm High breakdown voltage VCBO = 100 V V = 18 V EBO Low saturation voltage V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B High speed t = 1 s (typ.) (I = 5 A, I = 0.5 A) f C B High DC current gain h = 200 (min) (V = 5 V, I = 0.5 A) FE CE C Maximum Ra

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3 at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.1 0.4 0.8 3) Complements the 2SB1590K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 1.9 Type 2SD2444K (1)Emitter SMT3 Package (2)Base Each lead has same

2SB1590K Transistors Transistors 2SD2444K (96-150-B218) (96-247-D218) 293 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 3 2 1

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 3 2 1

SMD Type Transistors NPN Transistors 2SD2441 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

isc Silicon NPN Darlington Power Transistor 2SD2449 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High DC Current Gain- h = 3000( Min.) @(I = 8A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 3.0V(Max)@ (I = 8A, I = 8mA) CE(sat) C B Complement to Type 2SB1594 Minimum Lot-to-Lot variations for robust device performance and reliable op