2SD2440 Todos los transistores

 

2SD2440 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2440

Código: D2440

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 18 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 5 MHz

Capacitancia de salida (Cc): 71 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO3PNIS

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2SD2440 Datasheet (PDF)

1.1. 2sd2440.pdf Size:188K _toshiba

2SD2440
2SD2440

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V : V = 18 V EBO • Low saturation voltage: V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B • High speed: t = 1 µs (typ.) (I = 5 A, I = ±0.5 A) f C B • High DC current gain: h = 200 (min) (V = 5 V, I = 0.5 A) FE CE C Maximum Ra

4.1. 2sd2449.pdf Size:180K _toshiba

2SD2440
2SD2440

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V

4.2. 2sd2444k.pdf Size:67K _rohm

2SD2440
2SD2440

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3 at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.1 0.4 0.8 3) Complements the 2SB1590K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 1.9 Type 2SD2444K (1)Emitter SMT3 Package (2)Base Each lead has same dim

 4.3. 2sd2444.pdf Size:45K _rohm

2SD2440
2SD2440

2SB1590K Transistors Transistors 2SD2444K (96-150-B218) (96-247-D218) 293 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only

4.4. 2sd2441.pdf Size:36K _panasonic

2SD2440
2SD2440

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 3 2 1 Parameter S

 4.5. 2sd2441 e.pdf Size:39K _panasonic

2SD2440
2SD2440

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 3 2 1 Parameter S

4.6. 2sd2449.pdf Size:264K _inchange_semiconductor

2SD2440
2SD2440

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2449 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IBB= 8mA) ·Complement to Type 2SB1594 APPLICATIONS ·Designed for power a

4.7. 2sd2441.pdf Size:824K _kexin

2SD2440
2SD2440

SMD Type Transistors NPN Transistors 2SD2441 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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